发明授权
- 专利标题: Stack microelectronic assemblies
- 专利标题(中): 堆叠微电子组件
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申请号: US11506472申请日: 2006-08-18
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公开(公告)号: US07545029B2公开(公告)日: 2009-06-09
- 发明人: Stuart E. Wilson , Ronald Green , Richard Dewitt Crisp , Giles Humpston
- 申请人: Stuart E. Wilson , Ronald Green , Richard Dewitt Crisp , Giles Humpston
- 申请人地址: US CA San Jose
- 专利权人: Tessera, Inc.
- 当前专利权人: Tessera, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- 主分类号: H01L23/02
- IPC分类号: H01L23/02 ; H05K7/00 ; H01L21/00
摘要:
A stacked microelectronic assembly includes a base substrate having conductive elements projecting from a bottom surface thereof and a first microelectronic subassembly underlying a bottom surface of the base substrate. The first microelectronic subassembly includes a first dielectric substrate, a first microelectronic element connected with the first dielectric substrate and first conductive posts projecting from the first dielectric substrate toward the bottom surface of the base substrate for electrically interconnecting the first microelectronic element and the base substrate. The assembly also has a second microelectronic subassembly overlying the base substrate. The second microelectronic subassembly includes a second dielectric substrate, a second microelectronic element connected with the second dielectric substrate and second conductive posts projecting toward the top surface of the base substrate for electrically interconnecting the second microelectronic element and the base substrate. The first microelectronic subassembly has a first height and the conductive elements projecting from the bottom surface of the base substrate have a second height that is greater than the first height of the first microelectronic subassembly.
公开/授权文献
- US20080042250A1 Stacked microelectronic assemblies and methods therefor 公开/授权日:2008-02-21
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