发明授权
US07547601B2 Low power electrically alterable nonvolatile memory cells and arrays
有权
低功率电气可变非易失性存储器单元和阵列
- 专利标题: Low power electrically alterable nonvolatile memory cells and arrays
- 专利标题(中): 低功率电气可变非易失性存储器单元和阵列
-
申请号: US11978875申请日: 2007-10-30
-
公开(公告)号: US07547601B2公开(公告)日: 2009-06-16
- 发明人: Chih-Hsin Wang
- 申请人: Chih-Hsin Wang
- 申请人地址: BB St. Michael
- 专利权人: Marvell World Trade Ltd.
- 当前专利权人: Marvell World Trade Ltd.
- 当前专利权人地址: BB St. Michael
- 主分类号: H01L21/331
- IPC分类号: H01L21/331 ; H01L21/336
摘要:
A method of providing a memory cell includes providing a body of a semiconductor material having a first conductivity type, arranging a filter of a conductor-filter system in contact with a first conductor of the conductor-filter system, arranging at least portion of a second conductor of a conductor-insulator system in contact with the filter, arranging a first insulator of the conductor-insulator system in contact with the second conductor at an interface, arranging a first region spaced from the second conductor, arranging a channel of the body between the first region and the second conductor, arranging a second insulator adjacent to the first region, arranging a charge storage region between the first and the second insulators, arranging a first portion of a word-line adjacent to and insulated from the charge storage region, and arranging a second portion of the word-line adjacent to and insulated from the body.
公开/授权文献
信息查询
IPC分类: