发明授权
US07547601B2 Low power electrically alterable nonvolatile memory cells and arrays 有权
低功率电气可变非易失性存储器单元和阵列

  • 专利标题: Low power electrically alterable nonvolatile memory cells and arrays
  • 专利标题(中): 低功率电气可变非易失性存储器单元和阵列
  • 申请号: US11978875
    申请日: 2007-10-30
  • 公开(公告)号: US07547601B2
    公开(公告)日: 2009-06-16
  • 发明人: Chih-Hsin Wang
  • 申请人: Chih-Hsin Wang
  • 申请人地址: BB St. Michael
  • 专利权人: Marvell World Trade Ltd.
  • 当前专利权人: Marvell World Trade Ltd.
  • 当前专利权人地址: BB St. Michael
  • 主分类号: H01L21/331
  • IPC分类号: H01L21/331 H01L21/336
Low power electrically alterable nonvolatile memory cells and arrays
摘要:
A method of providing a memory cell includes providing a body of a semiconductor material having a first conductivity type, arranging a filter of a conductor-filter system in contact with a first conductor of the conductor-filter system, arranging at least portion of a second conductor of a conductor-insulator system in contact with the filter, arranging a first insulator of the conductor-insulator system in contact with the second conductor at an interface, arranging a first region spaced from the second conductor, arranging a channel of the body between the first region and the second conductor, arranging a second insulator adjacent to the first region, arranging a charge storage region between the first and the second insulators, arranging a first portion of a word-line adjacent to and insulated from the charge storage region, and arranging a second portion of the word-line adjacent to and insulated from the body.
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