发明授权
US07547620B2 Film pattern producing method, and producing method for electronic device, electron-emitting device and electron source substrate utilizing the same
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薄膜图案制造方法，以及利用该方法的电子器件，电子发射器件和电子源基片的制造方法
- 专利标题： Film pattern producing method, and producing method for electronic device, electron-emitting device and electron source substrate utilizing the same
- 专利标题（中）： 薄膜图案制造方法，以及利用该方法的电子器件，电子发射器件和电子源基片的制造方法
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申请号： US11214944申请日： 2005-08-31
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公开(公告)号： US07547620B2公开(公告)日： 2009-06-16
- 发明人: Shosei Mori , Tsuyoshi Furuse , Masahiro Terada , Takeru Mizue , Kazuhiro Kagami
- 申请人： Shosei Mori , Tsuyoshi Furuse , Masahiro Terada , Takeru Mizue , Kazuhiro Kagami
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2004-253985 20040901
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for producing a film pattern comprises a step of forming a resin film on a substrate surface; a step of incorporating into the resin film a constituent of a conductive film or a semiconductor film; a step of irradiating the resin film with an ultraviolet light; and a step of heating the resin film at a temperature not lower than a decomposition temperature of the resin to form a conductive film or a semiconductor film on the substrate, whereby the resin does not easily generate decomposition residues to improve precision and quality of the produced film pattern.
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