发明授权
- 专利标题： Ferroelectric capacitor and its manufacturing method and ferroelectric memory device
- 专利标题（中）： 铁电电容器及其制造方法和铁电存储器件
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申请号： US11459742申请日： 2006-07-25
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公开(公告)号： US07547629B2公开(公告)日： 2009-06-16
- 发明人: Hiroaki Tamura , Hiroyuki Mitsui , Tatsuo Sawasaki
- 申请人： Hiroaki Tamura , Hiroyuki Mitsui , Tatsuo Sawasaki
- 申请人地址： JP
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： JP2005-225482 20050803
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L29/004
摘要：
A method for manufacturing a ferroelectric capacitor includes steps of: (a) forming a first crystalline barrier layer; (b) forming a second crystalline barrier layer composed of nitride by nitriding the first crystalline barrier layer; (c) forming a first electrode above the second crystalline barrier layer; (d) forming a ferroelectric film on the first electrode; and (e) forming a second electrode on the ferroelectric film.
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