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    Ferroelectric capacitor and its manufacturing method and ferroelectric memory device
    1.
    发明授权
    Ferroelectric capacitor and its manufacturing method and ferroelectric memory device 有权
    铁电电容器及其制造方法和铁电存储器件

    公开(公告)号：US07547629B2

    公开(公告)日：2009-06-16

    申请号：US11459742

    申请日：2006-07-25

    申请人： Hiroaki Tamura ,  Hiroyuki Mitsui ,  Tatsuo Sawasaki

    发明人： Hiroaki Tamura ,  Hiroyuki Mitsui ,  Tatsuo Sawasaki

    IPC分类号： H01L21/44 ,  H01L29/004

    CPC分类号： H01L28/75 ,  H01L28/65

    摘要： A method for manufacturing a ferroelectric capacitor includes steps of: (a) forming a first crystalline barrier layer; (b) forming a second crystalline barrier layer composed of nitride by nitriding the first crystalline barrier layer; (c) forming a first electrode above the second crystalline barrier layer; (d) forming a ferroelectric film on the first electrode; and (e) forming a second electrode on the ferroelectric film.

    摘要翻译： 制造铁电电容器的方法包括以下步骤：（a）形成第一晶体阻挡层; （b）通过氮化第一晶体阻挡层形成由氮化物构成的第二晶体阻挡层; （c）在第二晶体阻挡层上形成第一电极; （d）在所述第一电极上形成铁电体膜; 和（e）在所述强电介质膜上形成第二电极。

    WET SMELTING PLANT FOR NICKEL OXIDE ORE AND METHOD OF OPERATING THE SAME
    3.
    发明申请
    WET SMELTING PLANT FOR NICKEL OXIDE ORE AND METHOD OF OPERATING THE SAME 审中-公开
    镍氧化镍冶炼厂及其操作方法

    公开(公告)号：US20130207325A1

    公开(公告)日：2013-08-15

    申请号：US13639788

    申请日：2011-04-14

    申请人： Hiroyuki Mitsui ,  Osamu Nakai ,  Tooru Kitazaki ,  Moritarou Asatori

    发明人： Hiroyuki Mitsui ,  Osamu Nakai ,  Tooru Kitazaki ,  Moritarou Asatori

    IPC分类号： C22B3/00

    CPC分类号： C22B23/043 ,  C22B3/02 ,  C22B23/0407 ,  C22B23/0461 ,  Y02P10/234

    摘要： A wet smelting plant for nickel oxide ore is provided in which, even when a serious trouble occurs in a processing facility, the preparation period of time of the processing facility required for discontinuing and restarting the operation can be minimized. The wet smelting plant for nickel oxide ore (20) comprises two or more series of the processing facilities, each processing facility including a step operating facility, a utility feed facility (8a), (8b), a hydrogen sulfide feed facility (10a), (10b), a flocculant feed facility (14a), (14b), and a neutralizer feed facility (12a), (12b) and is featured in that connecting installations are further provided for connecting between the utility feed facilities (8a) and (8b), between the hydrogen sulfide feed facilities (10a) and (10b), between the flocculant feed facilities (14a) and (14b), and between the neutralizer feed facilities (12a) and (12b) in order to make the delivery of utility supplies, hydrogen sulfide, flocculant, and neutralizer for mutual substitution.

    摘要翻译： 提供了一种用于氧化镍矿石的湿式熔炼设备，其中即使在处理设备中发生严重故障的情况下，可以最小化停止和重新启动操作所需的处理设备的准备时间。 用于氧化镍矿石（20）的湿式熔炼设备包括两个或更多个处理设备系列，每个处理设备包括步骤操作设施，公用设备供应设施（8a），（8b），硫化氢供应设备（10a） ，（10b），絮凝剂供给设备（14a），（14b）和中和器供给设备（12a），（12b），其特征在于，连接装置还设置用于连接公用设施供给设备（8a）和 （8b）之间，在硫化氢供给设备（10a）和（10b）之间，在絮凝剂供给设备（14a）和（14b）之间以及中和器供给设备（12a）和（12b）之间， 公用事业用品，硫化氢，絮凝剂和中和剂相互替代。

    CHEMICAL HEAT ACCUMULATOR
    4.
    发明申请
    CHEMICAL HEAT ACCUMULATOR 有权
    化学热收缩剂

    公开(公告)号：US20120251394A1

    公开(公告)日：2012-10-04

    申请号：US13433766

    申请日：2012-03-29

    申请人： Katsuya Komaki ,  Hiroshi Mieda ,  Tadahiro Nakagawa ,  Takashi Shimazu ,  Tomohisa Wakasugi ,  Hiroyuki Mitsui ,  Hideo Sobukawa

    发明人： Katsuya Komaki ,  Hiroshi Mieda ,  Tadahiro Nakagawa ,  Takashi Shimazu ,  Tomohisa Wakasugi ,  Hiroyuki Mitsui ,  Hideo Sobukawa

    IPC分类号： G05D23/13 ,  B01J8/06

    CPC分类号： F28D20/003 ,  Y02E60/142

    摘要： A chemical heat accumulator includes a receptacle, a first reaction vessel, and a second reaction vessel. The first reaction vessel is hermetically connected to the receptacle and supplied with water from the receptacle. The first reaction vessel contains a chemical compound that causes a hydration reaction with the water from the receptacle to generate water vapor by a heat of reaction, and causes a dehydration reaction by receiving heat. The second reaction vessel is hermetically connected to the first reaction vessel and supplied with the water vapor from the first reaction vessel. The second reaction vessel contains a chemical heat storage material that generates heat by causing a hydration reaction with the water vapor from the first reaction vessel and stores heat through a dehydration reaction caused by receiving heat. The chemical heat storage material is thermally in contact with an object to be heated.

    摘要翻译： 化学蓄热器包括容器，第一反应容器和第二反应容器。 第一反应容器与容器气密连接并从容器供水。 第一反应容器含有使化合物与来自容器的水进行水合反应，通过反应热产生水蒸气，并通过接收热量引起脱水反应。 第二反应容器与第一反应容器气密连接，并从第一反应容器供给水蒸气。 第二反应容器含有通过与来自第一反应容器的水蒸汽进行水合反应产生热量的化学蓄热材料，并且通过接受热引起的脱水反应来储存热量。 化学蓄热材料与待加热物体热接触。

    Fuel cell system and method for controlling the same
    5.
    发明授权
    Fuel cell system and method for controlling the same 有权
    燃料电池系统及其控制方法

    公开(公告)号：US08263273B2

    公开(公告)日：2012-09-11

    申请号：US10585875

    申请日：2005-02-15

    申请人： Shigeru Ogino ,  Satoshi Aoyama ,  Satoshi Shiokawa ,  Hiroyuki Mitsui ,  Hiroshi Aoki ,  Takashi Shimazu

    发明人： Shigeru Ogino ,  Satoshi Aoyama ,  Satoshi Shiokawa ,  Hiroyuki Mitsui ,  Hiroshi Aoki ,  Takashi Shimazu

    IPC分类号： H01M8/06 ,  H01M8/04 ,  F01N3/20 ,  G05D23/00

    CPC分类号： C01B3/384 ,  C01B2203/0233 ,  C01B2203/066 ,  C01B2203/0811 ,  C01B2203/0822 ,  C01B2203/0827 ,  C01B2203/169 ,  H01M8/04089 ,  H01M8/0612 ,  H01M8/0687 ,  Y02P20/128

    摘要： A control device 7 obtains a reformed carbon quantity C supplied to a reform reaction flow channel 21 from a supplied fuel quantity Qf and also obtains a reformed water quantity S supplied to the reform reaction flow channel 21 from a generated power quantity W. Further, it obtains a oxygen consumed quantity consumed through power generation in a fuel cell 3 from the generated power quantity W, a supplied oxygen quantity to be supplied to a cathode flow channel 33 from a supplied cathode gas quantity Qc, and a reformed oxygen quantity O to be supplied to the reform reaction flow channel 21 based on a difference between the supplied oxygen quantity and the consumed oxygen quantity. By correcting a reformed carbon quantity C (delivery of a fuel pump 51) in accordance with the reformed oxygen quantity O, each of O/C and S/C is kept in a target value range.

    摘要翻译： 控制装置7从供给燃料量Qf获得供给改性反应流路21的重整碳量C，并且从发电量W获得供给改性反应流路21的重整水量S.此外， 从所产生的电力量W获得从燃料电池3的发电消耗的氧消耗量，从供给的阴极气体量Qc供给到阴极流路33的供给氧量，以及重整用氧量O 基于供给的氧量和消耗的氧量之间的差，供给至改质反应流路21。 通过根据重整氧气量O校正重整碳量C（燃料泵51的输送），O / C和S / C中的每一个都保持在目标值范围内。

    Method for manufacturing ferroelectric memory device and ferroelectric memory device
    6.
    发明授权
    Method for manufacturing ferroelectric memory device and ferroelectric memory device 有权
    铁电存储器件和铁电存储器件的制造方法

    公开(公告)号：US07927889B2

    公开(公告)日：2011-04-19

    申请号：US12031793

    申请日：2008-02-15

    申请人： Hiroyuki Mitsui

    发明人： Hiroyuki Mitsui

    IPC分类号： H01L21/8239

    CPC分类号： H01L21/76849 ,  H01L21/76856 ,  H01L21/7687 ,  H01L27/11507 ,  H01L28/55

    摘要： A method for manufacturing a ferroelectric memory device includes: forming a conductive base layer above a substrate; and laminating above the base layer a first electrode, a ferroelectric layer and a second electrode, wherein, prior to the step of forming the base layer, the method includes forming an active element in the substrate, forming an interlayer dielectric film on the substrate, and forming a contact plug in the interlayer dielectric film, and wherein the step of forming the base layer includes: forming a first conductive layer composed of a conductive material having a self-orienting property on the interlayer dielectric film including the contact plug; planarizing the first conductive layer by a chemical mechanical polishing method thereby forming a planarized first conductive layer that covers the interlayer dielectric film including the contact plug; applying an ammonia plasma process to a surface of the planarized first conductive layer; forming a titanium layer on the planarized first conductive layer treated with the ammonia plasma process; and heat-treating the titanium layer in a nitrogen atmosphere thereby changing the titanium layer to a titanium nitride layer which forms a second conductive layer.

    摘要翻译： 铁电存储器件的制造方法包括：在基板的上方形成导电性基底层; 在第一电极，铁电层和第二电极之上层叠第一电极，铁电层和第二电极，其中，在形成基底层的步骤之前，该方法包括在衬底中形成有源元件，在衬底上形成层间电介质膜， 在所述层间电介质膜中形成接触塞，其特征在于，形成所述基层的步骤包括：在包括所述接触插塞的层间电介质膜上形成由具有自取向性的导电材料构成的第一导电层; 通过化学机械抛光方法对第一导电层进行平坦化，从而形成覆盖包括接触插塞的层间绝缘膜的平坦化第一导电层; 对平坦化的第一导电层的表面施加氨等离子体工艺; 在用氨等离子体处理的平面化的第一导电层上形成钛层; 在氮气气氛中对钛层进行热处理，由此将钛层变成形成第二导电层的氮化钛层。

    METHOD FOR MANUFACTURING FERROELECTRIC MEMORY DEVICE AND FERROELECTRIC MEMORY DEVICE
    8.
    发明申请
    METHOD FOR MANUFACTURING FERROELECTRIC MEMORY DEVICE AND FERROELECTRIC MEMORY DEVICE 有权
    制造电磁存储器件和电磁存储器件的方法

    公开(公告)号：US20080212358A1

    公开(公告)日：2008-09-04

    申请号：US12031793

    申请日：2008-02-15

    申请人： Hiroyuki Mitsui

    发明人： Hiroyuki Mitsui

    IPC分类号： G11C11/22 ,  H01L21/02

    CPC分类号： H01L21/76849 ,  H01L21/76856 ,  H01L21/7687 ,  H01L27/11507 ,  H01L28/55

    摘要： A method for manufacturing a ferroelectric memory device includes: forming a conductive base layer above a substrate; and laminating above the base layer a first electrode, a ferroelectric layer and a second electrode, wherein, prior to the step of forming the base layer, the method includes forming an active element in the substrate, forming an interlayer dielectric film on the substrate, and forming a contact plug in the interlayer dielectric film, and wherein the step of forming the base layer includes: forming a first conductive layer composed of a conductive material having a self-orienting property on the interlayer dielectric film including the contact plug; planarizing the first conductive layer by a chemical mechanical polishing method thereby forming a planarized first conductive layer that covers the interlayer dielectric film including the contact plug; applying an ammonia plasma process to a surface of the planarized first conductive layer; forming a titanium layer on the planarized first conductive layer treated with the ammonia plasma process; and heat-treating the titanium layer in a nitrogen atmosphere thereby changing the titanium layer to a titanium nitride layer which forms a second conductive layer.

    摘要翻译： 铁电存储器件的制造方法包括：在基板的上方形成导电性基底层; 在第一电极，铁电层和第二电极之上层叠第一电极，铁电层和第二电极，其中，在形成基底层的步骤之前，该方法包括在衬底中形成有源元件，在衬底上形成层间电介质膜， 在所述层间电介质膜中形成接触塞，其特征在于，形成所述基层的步骤包括：在包括所述接触插塞的层间电介质膜上形成由具有自取向性的导电材料构成的第一导电层; 通过化学机械抛光方法对第一导电层进行平坦化，从而形成覆盖包括接触插塞的层间绝缘膜的平坦化第一导电层; 对平坦化的第一导电层的表面施加氨等离子体工艺; 在用氨等离子体处理的平面化的第一导电层上形成钛层; 在氮气气氛中对钛层进行热处理，由此将钛层变成形成第二导电层的氮化钛层。

    Ferroelectric memory and its manufacturing method
    10.
    发明申请
    Ferroelectric memory and its manufacturing method 有权
    铁电记忆及其制造方法

    公开(公告)号：US20060099722A1

    公开(公告)日：2006-05-11

    申请号：US11226728

    申请日：2005-09-14

    申请人： Hiroyuki Mitsui ,  Katsuo Takano ,  Shinichi Fukada ,  Hiroshi Matsuki

    发明人： Hiroyuki Mitsui ,  Katsuo Takano ,  Shinichi Fukada ,  Hiroshi Matsuki

    IPC分类号： H01L21/00

    CPC分类号： H01L28/57 ,  H01L27/11507 ,  H01L28/65

    摘要： A method for manufacturing a ferroelectric memory includes: (a) forming first and second contact sections on a first dielectric layer formed above a base substrate; (b) forming a laminated body having a lower electrode, a ferroelectric layer and an upper electrode successively laminated; (c) forming a conductive hard mask above the laminated body and etching an area of the laminated body exposed through the hard mask, to thereby form a ferroelectric capacitor above the first contact section; (d) forming above the first dielectric layer a second dielectric layer that covers the hard mask, the ferroelectric capacitor and the second contact section; (e) forming a contact hole in the second dielectric layer which exposes the second contact section; (f) providing a conductive layer in an area including the contact hole for forming a third contact section; and (g) polishing the conductive layer and the second dielectric layer until the hard mask above the ferroelectric capacitor is exposed.

    摘要翻译： 制造铁电存储器的方法包括：（a）在形成在基底基板上的第一电介质层上形成第一和第二接触部分; （b）依次层叠具有下电极，铁电层和上电极的叠层体; （c）在层叠体上形成导电硬掩模，并蚀刻通过硬掩模暴露的层叠体的区域，从而在第一接触部分上形成铁电电容器; （d）在所述第一电介质层的上方形成覆盖所述硬掩模，所述强电介质电容器和所述第二接触部的第二电介质层; （e）在所述第二电介质层中形成暴露所述第二接触部分的接触孔; （f）在包括用于形成第三接触部分的接触孔的区域中提供导电层; 和（g）研磨导电层和第二介电层，直到暴露铁电电容器上方的硬掩模。