发明授权
- 专利标题： Semiconductor device and manufacturing method of a semiconductor device
- 专利标题（中）： 半导体装置及半导体装置的制造方法
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申请号： US10695643申请日： 2003-10-29
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公开(公告)号： US07547933B2公开(公告)日： 2009-06-16
- 发明人: Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
- 申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
- 申请人地址： JP Tokyo
- 专利权人： Fujitsu Microelectronics Limited
- 当前专利权人： Fujitsu Microelectronics Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP.
- 优先权： JP2002-316733 20021030
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
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