Invention Grant
- Patent Title: Methods for measuring capacitance
- Patent Title (中): 测量电容的方法
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Application No.: US11552779Application Date: 2006-10-25
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Publication No.: US07548067B2Publication Date: 2009-06-16
- Inventor: Kin P. Cheung , Dawei Heh , Byoung Hun Lee , Rino Choi
- Applicant: Kin P. Cheung , Dawei Heh , Byoung Hun Lee , Rino Choi
- Applicant Address: US TX Austin US NJ New Brunswick
- Assignee: Sematech, Inc.,Rutgers University
- Current Assignee: Sematech, Inc.,Rutgers University
- Current Assignee Address: US TX Austin US NJ New Brunswick
- Agency: Fulbright & Jaworski LLP
- Main IPC: G01R31/11
- IPC: G01R31/11 ; G01R27/04 ; G01R27/32 ; G01R31/26
Abstract:
Methods for determining capacitance values of a metal on semiconductor (MOS) structure are provided. A time domain reflectometry circuit may be loaded with a MOS structure. The MOS structure may be biased with various voltages, and reflectometry waveforms from the applied voltage may be collected. The capacitance of the MOS structure may be determined from the reflectometry waveforms.
Public/Granted literature
- US20080100283A1 Methods for Measuring Capacitance Public/Granted day:2008-05-01
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