发明授权
US07548430B1 Buildup dielectric and metallization process and semiconductor package
有权
建立电介质和金属化工艺及半导体封装
- 专利标题: Buildup dielectric and metallization process and semiconductor package
- 专利标题(中): 建立电介质和金属化工艺及半导体封装
-
申请号: US11497617申请日: 2006-08-01
-
公开(公告)号: US07548430B1公开(公告)日: 2009-06-16
- 发明人: Ronald Patrick Huemoeller , Sukianto Rusli , David Jon Hiner
- 申请人: Ronald Patrick Huemoeller , Sukianto Rusli , David Jon Hiner
- 申请人地址: US AZ Chandler
- 专利权人: Amkor Technology, Inc.
- 当前专利权人: Amkor Technology, Inc.
- 当前专利权人地址: US AZ Chandler
- 代理机构: Gunnison, McKay & Hodgson, L.L.P.
- 代理商 Serge J. Hodgson
- 主分类号: H05K7/00
- IPC分类号: H05K7/00
摘要:
A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.
信息查询