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发明授权
US07548467B2 Bias voltage generator and method generating bias voltage for semiconductor memory device 有权
用于半导体存储器件的偏置电压发生器和产生偏置电压的方法

Bias voltage generator and method generating bias voltage for semiconductor memory device
摘要：
There are provided a bias voltage generator, a semiconductor memory device having the bias voltage generator, and a method for generating the bias voltage. The bias voltage generator which generates the bias voltage to control a sensing current supplied to a memory cell for sensing data is characterized in that the bias voltage is output in response to an input voltage being applied, so that a slope of the bias voltage to the input voltage is different in at least two sections divided corresponding to a level of the input voltage.
摘要（中）：

提供了偏置电压发生器，具有偏置电压发生器的半导体存储器件以及用于产生偏置电压的方法。 产生用于控制提供给存储单元的感测电流以感测数据的偏置电压的偏置电压发生器的特征在于，响应于所施加的输入电压而输出偏置电压，使得偏置电压的斜率 至少两个部分的输入电压不同，对应于输入电压的电平。

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