发明授权
- 专利标题: Tubular reaction vessel and process for producing silicon therewith
- 专利标题(中): 管状反应容器及其制造方法
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申请号: US10567943申请日: 2004-08-11
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公开(公告)号: US07553467B2公开(公告)日: 2009-06-30
- 发明人: Satoru Wakamatsu , Shigeki Sugimura , Yasuo Nakamura , Kenichi Tsujio
- 申请人: Satoru Wakamatsu , Shigeki Sugimura , Yasuo Nakamura , Kenichi Tsujio
- 申请人地址: JP Shunan-shi, Yamaguchi
- 专利权人: Tokuyama Corporation
- 当前专利权人: Tokuyama Corporation
- 当前专利权人地址: JP Shunan-shi, Yamaguchi
- 代理机构: The Webb Law Firm
- 优先权: JP2003-293197 20030813
- 国际申请: PCT/JP2004/011542 WO 20040811
- 国际公布: WO2005/016820 WO 20050224
- 主分类号: C01B33/03
- IPC分类号: C01B33/03 ; C23C16/24 ; C23C16/46
摘要:
There is provided a reaction vessel whereby silicon produced can be smoothly recovered dropwise without excessive thermal load on constitutional parts of the reaction vessel, a silicon deposition feedstock gas can be reacted efficiently even when the reaction vessel is scaled up to industrial large-scale equipment, generation of silicon fine powder and silane oligomers can be suppressed, and industrial silicon production can be performed over extended periods. The tubular reaction vessel comprises a longitudinally-extending wall with a space thereinside, wherein a silicon deposition feedstock gas inflow opening and a deposited silicon discharge opening are provided at an upper portion and a lower end portion respectively, and a flow resistance-increasing region is created on a wall surface of the tubular reaction vessel that is contacted with a feedstock gas. The flow resistance-increasing region is at least one of protrudent, concave and sloped regions.
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