发明授权
- 专利标题: Method(s) of forming a thin layer
- 专利标题(中): 形成薄层的方法
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申请号: US11329158申请日: 2006-01-11
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公开(公告)号: US07553742B2公开(公告)日: 2009-06-30
- 发明人: Yong-Hoon Son , Yu-Gyun Shin , Jong-Wook Lee
- 申请人: Yong-Hoon Son , Yu-Gyun Shin , Jong-Wook Lee
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2005-0003084 20050113
- 主分类号: H01L21/76
- IPC分类号: H01L21/76
摘要:
A method of forming a thin layer including providing a first single-crystalline silicon layer partially exposed through an opening in an insulation pattern and forming an epitaxial layer on the first single-crystalline silicon layer and forming an amorphous silicon layer on the insulation pattern, the amorphous silicon layer having a first portion adjacent the epitaxial layer and a second portion spaced apart from the first portion, wherein the amorphous silicon layer is formed on the insulation pattern at substantially the same rate at the first portion and at a second portion. The amorphous silicon layer may be formed to a uniform thickness without a thinning defect.
公开/授权文献
- US20060154453A1 Method(s) of forming a thin layer 公开/授权日:2006-07-13