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US07553763B2 Salicide process utilizing a cluster ion implantation process 有权
利用簇离子注入工艺的自杀过程

Salicide process utilizing a cluster ion implantation process
Abstract:
A salicide process contains providing a silicon substrate that comprises at least a predetermined salicide region, performing a cluster ion implantation process to form an amorphized layer in the predetermined salicide region of the silicon substrate near, forming a metal layer on the surface of the amorphized layer, and reacting the metal layer with the amorphized layer to form a silicide layer on the surface of the silicon substrate.
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