Invention Grant
- Patent Title: Salicide process utilizing a cluster ion implantation process
- Patent Title (中): 利用簇离子注入工艺的自杀过程
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Application No.: US11463012Application Date: 2006-08-08
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Publication No.: US07553763B2Publication Date: 2009-06-30
- Inventor: Tsai-Fu Hsiao , Chin-Cheng Chien , Kuo-Tai Huang
- Applicant: Tsai-Fu Hsiao , Chin-Cheng Chien , Kuo-Tai Huang
- Applicant Address: TW Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/20
- IPC: H01L21/20

Abstract:
A salicide process contains providing a silicon substrate that comprises at least a predetermined salicide region, performing a cluster ion implantation process to form an amorphized layer in the predetermined salicide region of the silicon substrate near, forming a metal layer on the surface of the amorphized layer, and reacting the metal layer with the amorphized layer to form a silicide layer on the surface of the silicon substrate.
Public/Granted literature
- US20070037373A1 SALICIDE PROCESS UTILIZING A CLUSTER ION IMPLANTATION PROCESS Public/Granted day:2007-02-15
Information query
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