发明授权
- 专利标题： Method of manufacturing thin-film electronic device having a through-hole extending through the base and in communicative connection with an opening in the electrically conductive layer
- 专利标题（中）： 制造薄膜电子器件的方法，该薄膜电子器件具有延伸穿过基底并与导电层中的开口连通的通孔
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申请号： US11490164申请日： 2006-07-21
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公开(公告)号： US07553765B2公开(公告)日： 2009-06-30
- 发明人: Eiju Komuro , Osamu Shinoura , Yumiko Ozaki , Akira Shibue
- 申请人： Eiju Komuro , Osamu Shinoura , Yumiko Ozaki , Akira Shibue
- 申请人地址： JP Tokyo
- 专利权人： TDK Corporation
- 当前专利权人： TDK Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JPP2005-221641 20050729
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method of manufacturing a thin-film electronic device comprising providing a dielectric layer on a base, providing a first electrically conductive layer having a first opening and covering at least part of the dielectric layer; and forming a first through-hole extending through the base and communicating with the first opening. A second electrically conductive layer may be provided on the base, and a dielectric layer may be provided so as to cover at least part of this second conductive layer.
公开/授权文献
- US20070026581A1 Method of manufacturing thin-film electronic device 公开/授权日：2007-02-01
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