发明授权
- 专利标题: Active matrix substrate and its manufacturing method
- 专利标题(中): 有源矩阵基板及其制造方法
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申请号: US11274281申请日: 2005-11-16
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公开(公告)号: US07554119B2公开(公告)日: 2009-06-30
- 发明人: Kyoko Sawamizu , Makoto Ohtani , Yasushi Matsui
- 申请人: Kyoko Sawamizu , Makoto Ohtani , Yasushi Matsui
- 申请人地址: JP Chiyoda-Ku, Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JP Chiyoda-Ku, Tokyo
- 代理机构: Buchanan Ingersoll & Rooney PC
- 优先权: JP2005-022540 20050131
- 主分类号: H01L27/14
- IPC分类号: H01L27/14 ; H01L29/04 ; H01L29/15 ; H01L31/036
摘要:
An active matrix substrate with a high aperture ratio is provided, which is capable of preventing electrical short circuits between pixel electrodes and auxiliary capacitive electrodes. Gate lines and auxiliary capacitive electrodes are formed on an insulated substrate. The auxiliary capacitive electrodes have holes formed therethrough. To cover the gate lines and the auxiliary capacitive electrodes, a first interlayer insulating film is formed, on which source lines, a semiconductor layer, and drain electrodes are formed. Then, a second interlayer insulating film is formed to cover all those layers. In the second interlayer insulating film, contact holes are formed to reach the drain electrodes in areas corresponding to the areas of the holes. Pixel electrodes formed on the second interlayer insulating film are connected to the drain electrodes through the contact
公开/授权文献
- US20060169983A1 Active matrix substrate and its manufacturing method 公开/授权日:2006-08-03
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