公开(公告)号：US07923729B2

公开(公告)日：2011-04-12

申请号：US12470978

申请日：2009-05-22

申请人： Kyoko Sawamizu ,  Makoto Ohtani ,  Yasushi Matsui

发明人： Kyoko Sawamizu ,  Makoto Ohtani ,  Yasushi Matsui

IPC分类号： H01L29/04 ,  H01L29/10

CPC分类号： G02F1/136213 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L51/56

摘要： An active matrix substrate with a high aperture ratio is provided, which is capable of preventing electrical short circuits between pixel electrodes and auxiliary capacitive electrodes. Gate lines and auxiliary capacitive electrodes are formed on an insulated substrate. The auxiliary capacitive electrodes have holes formed therethrough. To cover the gate lines and the auxiliary capacitive electrodes, a first interlayer insulating film is formed, on which source lines, a semiconductor layer, and drain electrodes are formed. Then, a second interlayer insulating film is formed to cover all those layers. In the second interlayer insulating film, contact holes are formed to reach the drain electrodes in areas corresponding to the areas of the holes. Pixel electrodes formed on the second interlayer insulating film are connected to the drain electrodes through the contact holes.

摘要翻译： 提供具有高开口率的有源矩阵基板，其能够防止像素电极和辅助电容电极之间的电短路。 栅极线和辅助电容电极形成在绝缘基板上。 辅助电容电极具有从其形成的孔。 为了覆盖栅极线和辅助电容电极，形成第一层间绝缘膜，在其上形成源极线，半导体层和漏极。 然后，形成第二层间绝缘膜以覆盖所有这些层。 在第二层间绝缘膜中，形成接触孔到达与孔的区域对应的区域中的漏电极。 形成在第二层间绝缘膜上的像素电极通过接触孔与漏电极连接。

公开(公告)号：US07554119B2

公开(公告)日：2009-06-30

申请号：US11274281

申请日：2005-11-16

申请人： Kyoko Sawamizu ,  Makoto Ohtani ,  Yasushi Matsui

发明人： Kyoko Sawamizu ,  Makoto Ohtani ,  Yasushi Matsui

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： G02F1/136213 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L51/56

摘要： An active matrix substrate with a high aperture ratio is provided, which is capable of preventing electrical short circuits between pixel electrodes and auxiliary capacitive electrodes. Gate lines and auxiliary capacitive electrodes are formed on an insulated substrate. The auxiliary capacitive electrodes have holes formed therethrough. To cover the gate lines and the auxiliary capacitive electrodes, a first interlayer insulating film is formed, on which source lines, a semiconductor layer, and drain electrodes are formed. Then, a second interlayer insulating film is formed to cover all those layers. In the second interlayer insulating film, contact holes are formed to reach the drain electrodes in areas corresponding to the areas of the holes. Pixel electrodes formed on the second interlayer insulating film are connected to the drain electrodes through the contact

摘要翻译： 提供了具有高开口率的有源矩阵基板，其能够防止像素电极和辅助电容电极之间的电短路。 栅极线和辅助电容电极形成在绝缘基板上。 辅助电容电极具有从其形成的孔。 为了覆盖栅极线和辅助电容电极，形成第一层间绝缘膜，在其上形成源极线，半导体层和漏极。 然后，形成第二层间绝缘膜以覆盖所有这些层。 在第二层间绝缘膜中，形成接触孔到达与孔的区域对应的区域中的漏电极。 形成在第二层间绝缘膜上的像素电极通过接触连接到漏电极

公开(公告)号：US20060169983A1

公开(公告)日：2006-08-03

申请号：US11274281

申请日：2005-11-16

申请人： Kyoko Sawamizu ,  Makoto Ohtani ,  Yasushi Matsui

发明人： Kyoko Sawamizu ,  Makoto Ohtani ,  Yasushi Matsui

IPC分类号： H01L29/04

CPC分类号： G02F1/136213 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L51/56

摘要： An active matrix substrate with a high aperture ratio is provided, which is capable of preventing electrical short circuits between pixel electrodes and auxiliary capacitive electrodes. Gate lines and auxiliary capacitive electrodes are formed on an insulated substrate. The auxiliary capacitive electrodes have holes formed therethrough. To cover the gate lines and the auxiliary capacitive electrodes, a first interlayer insulating film is formed, on which source lines, a semiconductor layer, and drain electrodes are formed. Then, a second interlayer insulating film is formed to cover all those layers. In the second interlayer insulating film, contact holes are formed to reach the drain electrodes in areas corresponding to the areas of the holes. Pixel electrodes formed on the second interlayer insulating film are connected to the drain electrodes through the contact holes.

摘要翻译： 提供了具有高开口率的有源矩阵基板，其能够防止像素电极和辅助电容电极之间的电短路。 栅极线和辅助电容电极形成在绝缘基板上。 辅助电容电极具有从其形成的孔。 为了覆盖栅极线和辅助电容电极，形成第一层间绝缘膜，在其上形成源极线，半导体层和漏极。 然后，形成第二层间绝缘膜以覆盖所有这些层。 在第二层间绝缘膜中，形成接触孔到达与孔的区域对应的区域中的漏电极。 形成在第二层间绝缘膜上的像素电极通过接触孔与漏电极连接。

公开(公告)号：US5685944A

公开(公告)日：1997-11-11

申请号：US429319

申请日：1995-04-26

申请人： Masahisa Nose ,  Hiroshi Kozaki ,  Kazuhiro Tanaka ,  Masahiko Ono ,  Kazuya Watanabe ,  Makoto Ohtani ,  Keiichiro Minegishi

发明人： Masahisa Nose ,  Hiroshi Kozaki ,  Kazuhiro Tanaka ,  Masahiko Ono ,  Kazuya Watanabe ,  Makoto Ohtani ,  Keiichiro Minegishi

IPC分类号： B65H37/00 ,  B32B31/00

CPC分类号： B65H37/007 ,  Y10T156/1705 ,  Y10T156/1795 ,  Y10T156/1798 ,  Y10T156/18

摘要： A film transfer apparatus includes an apparatus casing having a feed-core support shaft for detachably mounting a feed core and a take-up core support shaft for detachably mounting a take-up core. The support shafts respectively include a transmission member for causing the feed core to provide a film ribbon take-up speed higher than a ribbon feed speed of the feed core. For slippably coupling the feed core rotation and the take-up core rotation, a slip coupling mechanism is provided. This mechanism is constituted by an engaged portion of the take-up core for engagement with a mating engaging portion of the take-up core support shaft. The engaged portion is elastically deformable to a non-transmission condition with application thereto of a force exceeding a predetermined level. Further, the engaged portion is provided with a mechanical strength smaller than the engaging portion.

摘要翻译： 一种胶片传送装置，包括具有用于可拆卸地安装供给芯的馈电芯支撑轴和用于可拆卸地安装卷取芯的卷取芯支撑轴的装置壳体。 支撑轴分别包括用于使供给芯提供高于进给芯的带进给速度的薄膜卷带速度的传动部件。 为了可靠地联接进给芯旋转和卷取芯旋转，提供滑动联接机构。 该机构由卷取芯的被接合部分构成，用于与卷取芯支撑轴的配合接合部分接合。 被接合部分可弹性变形为非传送状态，其中施加超过预定水平的力。 此外，被卡合部分具有比接合部分小的机械强度。

公开(公告)号：US20080118769A1

公开(公告)日：2008-05-22

申请号：US10588283

申请日：2004-09-10

申请人： Masashi Kawasaki ,  Akira Ohtomo ,  Tomoaki Fukumura ,  Atsushi Tsukazaki ,  Makoto Ohtani

发明人： Masashi Kawasaki ,  Akira Ohtomo ,  Tomoaki Fukumura ,  Atsushi Tsukazaki ,  Makoto Ohtani

IPC分类号： H01L29/12 ,  B29C71/00 ,  H05B6/00

CPC分类号： H01L21/02631 ,  H01L21/02554 ,  H01L21/02579 ,  Y10T428/12528

摘要： There is provided a method of manufacturing a thin film, in which not only high crystallinity and surface flatness can be realized but also dopant doping can be performed at high concentration. The method includes a low temperature highly doped layer growing step of performing dopant doping while growing the thin film at a given first temperature; an annealing step of interrupting the growth of the thin film and annealing the thin film at a given second temperature higher than the first temperature; and a high temperature lowly doped layer growing step of growing the thin film at the second temperature.

摘要翻译： 提供了一种制造薄膜的方法，其中不仅可以实现高结晶度和表面平坦度，而且可以以高浓度进行掺杂剂掺杂。 该方法包括在给定的第一温度下生长薄膜时执行掺杂剂掺杂的低温高掺杂层生长步骤; 退火步骤，在高于第一温度的给定第二温度下中断薄膜的生长并退火薄膜; 以及在第二温度下生长薄膜的高温低掺杂层生长步骤。

公开(公告)号：US5270845A

公开(公告)日：1993-12-14

申请号：US987591

申请日：1989-12-18

申请人： Hirokazu Sakamoto ,  Masayuki Yokomizo ,  Masahiro Hayama ,  Takao Matsumoto ,  Naoki Nakagawa ,  Makoto Ohtani

发明人： Hirokazu Sakamoto ,  Masayuki Yokomizo ,  Masahiro Hayama ,  Takao Matsumoto ,  Naoki Nakagawa ,  Makoto Ohtani

IPC分类号： G02F1/1362 ,  G02F1/1343

CPC分类号： G02F1/1362 ,  G02F2001/13629

摘要： An improved method for manufacturing a liquid crystal display unit substantially free from gate electrode breakage but with no increase in the number of manufacturing steps over the conventional method. The liquid crystal display unit includes a TFT array substrate including a plurality of gate electrode lines juxtaposed on a transparent insulating substrate, a plurality of source electrode lines arranged across the gate electrode lines, nonlinear active elements disposed at the intersections of the electrode lines, a confronting electrode substrate having a transparent conductive film on the surface thereof confronting the TFT array substrate, and a liquid crystal display material being held between the confronting electrode substrate and the TFT array substrate. Each of the gate electrode lines is constructed in the form of two layers. One of the two layers is made of display electrode material simultaneously with the formation of the display electrode.

摘要翻译： 一种用于制造基本上没有栅电极断裂但是与常规方法相比不增加制造步骤的液晶显示单元的改进方法。 液晶显示单元包括：TFT阵列基板，包括并排在透明绝缘基板上的多个栅极电极线;跨越栅极电极线布置的多个源极电极线;布置在电极线的交点处的非线性有源元件; 在与TFT阵列基板相对的表面上具有透明导电膜的面对电极基板和保持在相对电极基板和TFT阵列基板之间的液晶显示材料。 每个栅电极线以两层的形式构成。 与显示电极的形成同时，两层之一由显示电极材料制成。

公开(公告)号：US5066106A

公开(公告)日：1991-11-19

申请号：US296763

申请日：1989-01-13

申请人： Hirokazu Sakamoto ,  Makoto Ohtani ,  Naoki Nakagawa ,  Taro Maejima ,  Masahiro Hayama

发明人： Hirokazu Sakamoto ,  Makoto Ohtani ,  Naoki Nakagawa ,  Taro Maejima ,  Masahiro Hayama

IPC分类号： H01L27/12 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/1362 ,  G02F2001/13629 ,  G02F2202/103 ,  G02F2202/104

摘要： A liquid crystal display device includes a transparent conductive film display electrode on a transparent insulating substrate, a plurality of lower layer source conductors disposed simultaneously with a plurality of gate electrode conductors on the substrate, the source conductors intersecting the gate electrode conductors, a gate insulation film on the gate electrode conductors, the lower layer source conductors, and the display electrode, a semiconductor film disposed on the gate insulation film at a position overlying the gate electrode conductors, a drain electrode connected to the display electrode and disposed on the semiconductor film and the gate insulation film, and an upper layer source electrode conductor connected to the lower layer source conductors, the upper layer source electrode conductor disposed on the gate insulation film and the semiconductor film and forming a double-layer structure with the lower layer source conductors.

摘要翻译： 液晶显示装置包括在透明绝缘基板上的透明导电膜显示电极，与基板上的多个栅电极导体同时设置的多个下层源极导体，与栅极导体相交的源极导体，栅极绝缘 在栅极电极导体，下层源极导体和显示电极上形成膜，在覆盖栅极导体的位置配置在栅极绝缘膜上的半导体膜，连接到显示电极并设置在半导体膜上的漏电极 和栅极绝缘膜，以及连接到下层源极导体的上层源极电极导体，设置在栅极绝缘膜和半导体膜上的上层源极电极导体，并与下层源极导体形成双层结构 。