发明授权
- 专利标题： Implantation of carbon and/or fluorine in NMOS fabrication
- 专利标题（中）： 在NMOS制造中植入碳和/或氟
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申请号： US11451919申请日： 2006-06-13
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公开(公告)号： US07557022B2公开(公告)日： 2009-07-07
- 发明人: Mahalingam Nandakumar , Amitabh Jain , Lahir Shaik Adam
- 申请人： Mahalingam Nandakumar , Amitabh Jain , Lahir Shaik Adam
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- 主分类号： H01L21/425
- IPC分类号： H01L21/425
摘要：
Formation of an NMOS transistor is disclosed, where at least one of carbon, atomic fluorine and molecular fluorine (F2) are combined with implantations of at least one of arsenic, phosphorous and antimony. The dopant combinations can be used in LDD implantations to form source/drain extension regions, as well as in implantations to form halo regions and/or source/drain regions. The combinations of dopants help to reduce sheet resistance and increase carrier mobility, which in turn facilitates device scaling and desired device performance.
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