Invention Grant
- Patent Title: Closed loop dose control for ion implantation
- Patent Title (中): 离子注入的闭环剂量控制
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Application No.: US11543346Application Date: 2006-10-04
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Publication No.: US07557363B2Publication Date: 2009-07-07
- Inventor: Yongzhang Huang , Brian S. Freer , John Ye , Christopher Godfrey , Michael A. Graf , Patrick Splinter
- Applicant: Yongzhang Huang , Brian S. Freer , John Ye , Christopher Godfrey , Michael A. Graf , Patrick Splinter
- Applicant Address: US MA Beverly
- Assignee: Axcelis Technologies, Inc.
- Current Assignee: Axcelis Technologies, Inc.
- Current Assignee Address: US MA Beverly
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01J37/317
- IPC: H01J37/317

Abstract:
A method derives a terminal return current or upstream current to adjust and/or compensate for variations in beam current during ion implantation. One or more individual upstream current measurements are obtained from a region of an ion implantation system. A terminal return current, or composite upstream current, is derived from the one or more current measurements. The terminal return current is then employed to adjust scanning or dose of an ion beam in order to facilitate beam current uniformity at a target wafer.
Public/Granted literature
- US20070278427A1 Closed loop dose control for ion implantation Public/Granted day:2007-12-06
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