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    System and method of ion beam control in response to a beam glitch
    3.
    发明申请
    System and method of ion beam control in response to a beam glitch 有权
    响应于光束毛刺的离子束控制的系统和方法

    公开(公告)号：US20080067433A1

    公开(公告)日：2008-03-20

    申请号：US11441609

    申请日：2006-05-26

    申请人： Que Weiguo ,  Yongzhang Huang ,  John Ye ,  David Tao ,  Patrick Splinter

    发明人： Que Weiguo ,  Yongzhang Huang ,  John Ye ,  David Tao ,  Patrick Splinter

    IPC分类号： H01J37/317

    CPC分类号： H01J37/3171 ,  H01J37/026 ,  H01J37/241 ,  H01J37/304 ,  H01J37/3045 ,  H01J2237/0206 ,  H01J2237/24564 ,  H01J2237/2485 ,  H01J2237/30455 ,  H01J2237/31703 ,  Y10T307/937 ,  Y10T307/951 ,  Y10T307/957

    摘要： The present invention is directed to a switch circuit and method to quickly enable or disable the ion beam to a wafer within an ion implantation system. The beam control technique may be applied to wafer doping repaint and duty factor reduction. The circuit and method may be used to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. The circuit and method facilitates repainting the ion beam over areas where an arc was detected to recover dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc to minimize disruption of the ion beam. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages.

    摘要翻译： 本发明涉及一种用于在离子注入系统内快速启用或禁用离子束到晶片的开关电路和方法。 光束控制技术可以应用于晶片掺杂重绘和占空因数降低。 电路和方法可以用于淬灭可以在与离子源相关联的高压电极之间形成的电弧，以缩短电弧的持续时间并减轻非均匀的离子注入。 电路和方法有助于在检测到电弧的区域上重新分离离子束，以在这种电弧过程中恢复剂量损失。 在每个高压电源和其各自的电极之间增加高压高速开关电路，以快速熄灭电弧，以最小化离子束的破坏。 高压开关由触发电路控制，该触发电路检测每个电极的电压或电流变化。 HV开关的保护电路从反应部件吸收能量并夹紧任何过电压。

    System and method of ion beam control in response to a beam glitch
    4.
    发明授权
    System and method of ion beam control in response to a beam glitch 有权
    响应于光束毛刺的离子束控制的系统和方法

    公开(公告)号：US07507977B2

    公开(公告)日：2009-03-24

    申请号：US11441609

    申请日：2006-05-26

    申请人： Que Weiguo ,  Yongzhang Huang ,  John Ye ,  David Tao ,  Patrick Splinter

    发明人： Que Weiguo ,  Yongzhang Huang ,  John Ye ,  David Tao ,  Patrick Splinter

    IPC分类号： G21K5/10

    CPC分类号： H01J37/3171 ,  H01J37/026 ,  H01J37/241 ,  H01J37/304 ,  H01J37/3045 ,  H01J2237/0206 ,  H01J2237/24564 ,  H01J2237/2485 ,  H01J2237/30455 ,  H01J2237/31703 ,  Y10T307/937 ,  Y10T307/951 ,  Y10T307/957

    摘要： The present invention is directed to a switch circuit and method to quickly enable or disable the ion beam to a wafer within an ion implantation system. The beam control technique may be applied to wafer doping repaint and duty factor reduction. The circuit and method may be used to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. The circuit and method facilitates repainting the ion beam over areas where an arc was detected to recover dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc to minimize disruption of the ion beam. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages.

    摘要翻译： 本发明涉及一种用于在离子注入系统内快速启用或禁用离子束到晶片的开关电路和方法。 光束控制技术可以应用于晶片掺杂重绘和占空因数降低。 电路和方法可以用于淬灭可以在与离子源相关联的高压电极之间形成的电弧，以缩短电弧的持续时间并减轻非均匀的离子注入。 电路和方法有助于在检测到电弧的区域上重新分离离子束，以在这种电弧过程中恢复剂量损失。 在每个高压电源和其各自的电极之间增加高压高速开关电路，以快速熄灭电弧，以最小化离子束的破坏。 高压开关由触发电路控制，该触发电路检测每个电极的电压或电流变化。 HV开关的保护电路从反应部件吸收能量并夹紧任何过电压。

    Beam tuning with automatic magnet pole rotation for ion implanters
    7.
    发明授权
    Beam tuning with automatic magnet pole rotation for ion implanters 有权
    用于离子注入机的自动磁极旋转的光束调谐

    公开(公告)号：US07476855B2

    公开(公告)日：2009-01-13

    申请号：US11523144

    申请日：2006-09-19

    申请人： Yongzhang Huang

    发明人： Yongzhang Huang

    IPC分类号： H01J37/137 ,  H01J37/30 ,  H01J49/20 ,  H01J49/30 ,  H01J37/304

    CPC分类号： H01J49/30 ,  H01J37/026 ,  H01J37/05 ,  H01J37/21 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/1502 ,  H01J2237/152 ,  H01J2237/2485 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/31701

    摘要： An ion implantation apparatus, system, and method for controlling an ion beam, wherein a mass analyzer generally positioned between an ion source and an end station is configured to selectively control a path of a desired ion beam. The mass analyzer comprises one or more of an entrance pole mechanism positionable proximate to an entrance of the mass analyzer and an exit pole mechanism positionable proximate to an exit of the mass analyzer, wherein the position of the entrance pole mechanism and exit pole mechanism generally determines the path and focal point of the desired ion beam. A controller is configured to selectively position one or more of the entrance pole mechanism and exit pole mechanism, therein generally controlling the path of the desired ion beam at the exit of the mass analyzer, wherein the control may be based on one or more detected characteristics of the desired ion beam.

    摘要翻译： 用于控制离子束的离子注入装置，系统和方法，其中通常定位在离子源和终端站之间的质量分析器被配置为选择性地控制期望的离子束的路径。 质量分析器包括一个或多个可靠近质量分析器的入口定位的入口极机构和靠近质量分析器的出口定位的出口极机构，其中入口极机构和出口极机构的位置通常确定 所需离子束的路径和焦点。 控制器被配置为选择性地定位入口极机构和出口极机构中的一个或多个，其中通常控制质量分析器出口处的期望离子束的路径，其中控制可以基于一个或多个检测到的特性 的所需离子束。

    Beam tuning with automatic magnet pole rotation for ion implanters
    8.
    发明申请
    Beam tuning with automatic magnet pole rotation for ion implanters 有权
    用于离子注入机的自动磁极旋转的光束调谐

    公开(公告)号：US20080067435A1

    公开(公告)日：2008-03-20

    申请号：US11523144

    申请日：2006-09-19

    申请人： Yongzhang Huang

    发明人： Yongzhang Huang

    IPC分类号： H01J37/317 ,  H01J49/20 ,  H01J49/30

    CPC分类号： H01J49/30 ,  H01J37/026 ,  H01J37/05 ,  H01J37/21 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/024 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/1502 ,  H01J2237/152 ,  H01J2237/2485 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/31701

    摘要： An ion implantation apparatus, system, and method for controlling an ion beam, wherein a mass analyzer generally positioned between an ion source and an end station is configured to selectively control a path of a desired ion beam. The mass analyzer comprises one or more of an entrance pole mechanism positionable proximate to an entrance of the mass analyzer and an exit pole mechanism positionable proximate to an exit of the mass analyzer, wherein the position of the entrance pole mechanism and exit pole mechanism generally determines the path and focal point of the desired ion beam. A controller is configured to selectively position one or more of the entrance pole mechanism and exit pole mechanism, therein generally controlling the path of the desired ion beam at the exit of the mass analyzer, wherein the control may be based on one or more detected characteristics of the desired ion beam.

    摘要翻译： 用于控制离子束的离子注入装置，系统和方法，其中通常定位在离子源和终端站之间的质量分析器被配置为选择性地控制期望的离子束的路径。 质量分析器包括一个或多个可靠近质量分析器的入口定位的入口极机构和靠近质量分析器的出口定位的出口极机构，其中入口极机构和出口极机构的位置通常确定 所需离子束的路径和焦点。 控制器被配置为选择性地定位入口极机构和出口极机构中的一个或多个，其中通常控制质量分析器出口处的期望离子束的路径，其中控制可以基于一个或多个检测到的特性 的所需离子束。