发明授权
- 专利标题: Serial flash semiconductor memory
- 专利标题(中): 串行闪存半导体存储器
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申请号: US11078205申请日: 2005-03-11
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公开(公告)号: US07558900B2公开(公告)日: 2009-07-07
- 发明人: Robin J. Jigour , Eungjoon Park , Joo Weon Park , Jong Seuk Lee
- 申请人: Robin J. Jigour , Eungjoon Park , Joo Weon Park , Jong Seuk Lee
- 申请人地址: TW Hisn Chu
- 专利权人: Winbound Electronics Corporation
- 当前专利权人: Winbound Electronics Corporation
- 当前专利权人地址: TW Hisn Chu
- 代理机构: Cyr & Associates, P.A.
- 主分类号: G06F13/14
- IPC分类号: G06F13/14 ; G06F3/00 ; G06F13/42
摘要:
A serial flash memory is provided with multiple configurable pins, at least one of which is selectively configurable for use in either single-bit serial data transfers or multiple-bit serial data transfers. In single-bit serial mode, data transfer is bit-by-bit through a pin. In multiple-bit serial mode, a number of sequential bits are transferred at a time through respective pins. The serial flash memory may have 16 or fewer pins, and even 8 or fewer pins, so that low pin count packaging such as the 8-pin or 16-pin SOIC package and the 8-contact MLP/QFN/SON package may be used. The availability of the single-bit serial type protocol enables compatibility with a number of existing systems, while the availability of the multiple-bit serial type protocol enables the serial flash memory to provide data transfer rates, in systems that can support them, that are significantly faster than available with standard serial flash memories.
公开/授权文献
- US20060067123A1 Serial flash semiconductor memory 公开/授权日:2006-03-30
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