Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11727962Application Date: 2007-03-29
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Publication No.: US07560346B2Publication Date: 2009-07-14
- Inventor: Takeshi Igarashi
- Applicant: Takeshi Igarashi
- Applicant Address: JP Yamanashi
- Assignee: Eudyna Devices Inc.
- Current Assignee: Eudyna Devices Inc.
- Current Assignee Address: JP Yamanashi
- Agency: Westerman, Hattori, Daniels & Adrian, LLP.
- Priority: JP2006-101123 20060331
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/76
Abstract:
A semiconductor device includes: a first FET that is formed with first unit FETs each having a first finger electrode and a second finger electrode provided on either side of a gate finger electrode, the first unit FETs being connected in parallel; and a second FET that is formed with second unit FETs each having a first finger electrode and a second finger electrode provided on either side of a gate finger electrode, the second unit FETs being connected in parallel. In this semiconductor device, the second finger electrode of each of the first unit FETs and the first finger electrode of each corresponding one of the second unit FETs form a common finger electrode, and the first finger electrodes of the first unit FETs, the second finger electrodes of the second unit FETs, and the common finger electrodes are arranged in the gate length direction of the first FET and the second FET.
Public/Granted literature
- US20070228424A1 Semiconductor device and method of manufacturing the same Public/Granted day:2007-10-04
Information query
IPC分类:
