发明授权
- 专利标题： Phase change material with filament electrode
- 专利标题（中）： 相变材料与灯丝电极
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申请号： US12035237申请日： 2008-02-21
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公开(公告)号： US07560721B1公开(公告)日： 2009-07-14
- 发明人: Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Alejandro G. Schrott , Gerhard Ingmar Meijer
- 申请人： Matthew J. Breitwisch , Roger W. Cheek , Eric A. Joseph , Chung H. Lam , Alejandro G. Schrott , Gerhard Ingmar Meijer
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Vazken Alexanian, Esq.
- 主分类号： H01L47/00
- IPC分类号： H01L47/00
摘要：
The present invention, in one embodiment, provides a memory device that includes a phase change memory cell; a first electrode; and a layer of filamentary resistor material positioned between the phase change memory cell and the first electrode, wherein at least one bistable conductive filamentary pathway is present in at least a portion of the layer of filamentary resistor material that provides electrical communication between the phase change memory cell and the first electrode.
公开/授权文献
- US2109331A Proportioning device 公开/授权日：1938-02-22
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