发明授权
- 专利标题： Semiconductor light emitting element and fabrication method thereof
- 专利标题（中）： 半导体发光元件及其制造方法
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申请号： US11231071申请日： 2005-09-20
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公开(公告)号： US07560737B2公开(公告)日： 2009-07-14
- 发明人: Hitoshi Murofushi , Shiro Takeda
- 申请人： Hitoshi Murofushi , Shiro Takeda
- 申请人地址： JP Saitama
- 专利权人： Sanken Electric Co., Ltd.
- 当前专利权人： Sanken Electric Co., Ltd.
- 当前专利权人地址： JP Saitama
- 代理机构： Howard & Howard Attorneys PLLC
- 优先权： JP2004-284924 20040929
- 主分类号： H01L27/15
- IPC分类号： H01L27/15 ; H01L29/26 ; H01L31/12 ; H01L33/00
摘要：
In a semiconductor light emitting element, multiple bosses having a cylindrical shape and dispersed like islands, and recesses are formed on the upper surface of a window layer. A contact electrode is formed on the upper surface of the bosses. A transparent dielectric film is formed in the recesses. A transparent conductor film is formed on the transparent dielectric film and the contact electrode.
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