公开(公告)号：US20060175621A1

公开(公告)日：2006-08-10

申请号：US10496888

申请日：2002-12-27

申请人： Koji Ohtsuka ,  Hitoshi Murofushi

发明人： Koji Ohtsuka ,  Hitoshi Murofushi

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L29/18

CPC分类号： H01L27/156 ,  H01L33/10

摘要： A semiconductor light-emitting device includes substrate (3), a plurality of light-emitting-element-layers (10a, 10b, 10c, . . . ) of semiconductor material formed on the substrate (3) so as to be isolated from each other and having a wider band gap than the substrate (3), and phosphors (15a, 15b, 15c, . . . ) converting wavelengths of light from the light-emitting-element-layers (10a, 10b, 10c, . . . ) into other wavelengths.

摘要翻译： 半导体发光装置包括基板（3），形成在基板（3）上的半导体材料的多个发光元件层（10a，10b，10b等），以便成为 彼此隔离并且具有比衬底（3）更宽的带隙，以及将来自发光元件层（10a，15b）的光的波长转换的磷光体（15a，15b，15c ...） 10 b，10 c，...）到其他波长。

公开(公告)号：US20050205886A1

公开(公告)日：2005-09-22

申请号：US11135236

申请日：2005-05-23

申请人： Hitoshi Murofushi ,  Shiro Takeda

发明人： Hitoshi Murofushi ,  Shiro Takeda

IPC分类号： H01L21/18 ,  H01L21/22 ,  H01L29/22 ,  H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/387 ,  H01L21/182 ,  H01L21/2215 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/405

摘要： An LED comprising a light-generating semiconductor region having an active layer sandwiched between two confining layers of opposite conductivity types. A cathode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. An array of discrete gold regions are formed via transition metal regions on the other major surface of the semiconductor region at which is exposed one of the confining layers which is of n-type AlGaInP semiconductor material. The gold is thermally diffused into the confining layer via the transition metal regions at a temperature less than the eutectic point of gold and gallium, thereby creating an array of ohmic contact regions of alloyed or intermingled gold and gallium, which are less absorptive of light than their conventional counterparts, to a thickness of 20 to 1000 angstroms. After removing the transition metal regions and gold regions from the surface of the light-generating semiconductor region, a reflective layer of aluminum is formed so as to cover both the ohmic contact regions and the exposed surface portions of the AlGaInP confining layer. An electroconductive base-plate of doped silicon is then bonded to the reflective layer.

摘要翻译： 一种LED，其包括具有夹在相反导电类型的两个限制层之间的活性层的发光半导体区域。 阴极被布置在半导体区域的相对的主表面之一的中心上，从其发射光。 通过在半导体区域的另一个主表面上的过渡金属区域形成离散金区域的阵列，其中露出n型AlGaInP半导体材料的约束层之一。 金在低于金和镓的共晶点的温度下通过过渡金属区域热扩散到约束层中，从而产生合金或混合的金和镓的欧姆接触区域阵列，其比光吸收更少 它们的常规对应物，厚度为20至1000埃。 在从发光半导体区域的表面除去过渡金属区域和金色区域之后，形成铝的反射层，以覆盖AlGaInP约束层的欧姆接触区域和露出的表面部分。 然后将掺杂硅的导电基板接合到反射层。

公开(公告)号：US20090121237A1

公开(公告)日：2009-05-14

申请号：US12265887

申请日：2008-11-06

申请人： Hitoshi Murofushi ,  Koji Otsuka

发明人： Hitoshi Murofushi ,  Koji Otsuka

IPC分类号： H01L33/00 ,  H01L21/50

CPC分类号： H01L27/153 ,  G03G15/04054 ,  G03G15/326 ,  H01L33/385 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： An array of LEDs are grown by epitaxy on row-connecting conductor strips extending in parallel spaced relationship to one another on the surface of a semiconductor substrate and are thereby electrically interconnected in rows. The row-connecting conductor strips are formed by ion implantation of a p-type dopant into parts of an n-type silicon substrate. Column-connecting conductor strips extend over the light-emitting surfaces of the LEDs for electrically interconnecting them in columns. The LEDs are lit up individually by voltage application between one of the row-connecting conductor strips and one of the column-connecting conductor strips.

摘要翻译： LED阵列通过在半导体衬底的表面上彼此平行间隔延伸的行连接导体条上进行外延生长，从而以行电互连。 行连接导体条通过将p型掺杂剂离子注入到n型硅衬底的部分中而形成。 列连接导体条在LED的发光表面上延伸，以将它们串联在列中。 通过在一行之间的行连接导体条和一个列连接导体条之间的电压单独点亮LED。

公开(公告)号：US07087933B2

公开(公告)日：2006-08-08

申请号：US10987770

申请日：2004-11-12

申请人： Shiro Takeda ,  Hitoshi Murofushi

发明人： Shiro Takeda ,  Hitoshi Murofushi

IPC分类号： H01L29/22

CPC分类号： H01L33/0079 ,  H01L21/42 ,  H01L33/46

摘要： A light emitting diode has a semiconductor region for production of light. The semiconductor region is a lamination of two complementary layers, an n-type semiconductor layer, an active layer, a p-type semiconductor layer, another complementary layer, and an ohmic contact layer, in that order from a first major surface of the semiconductor layer, from which the light is emitted, toward a second. A reflective metal layer covers the second major surface of the semiconductor region via a transparent layer for reflecting the light that has traveled through the transparent layer from the semiconductor region. The transparent layer serves to prevent the semiconductor region and the reflective layer from alloying by heat treatments during the manufacture of the LED.

摘要翻译： 发光二极管具有用于产生光的半导体区域。 半导体区域是从半导体的第一主表面依次层叠两个互补层，n型半导体层，有源层，p型半导体层，另一互补层和欧姆接触层 光从其发射的层朝向第二层。 反射金属层经由透明层覆盖半导体区域的第二主表面，用于反射从半导体区域穿过透明层的光。 透明层用于防止半导体区域和反射层在制造LED期间通过热处理而合金化。

公开(公告)号：US20060076565A1

公开(公告)日：2006-04-13

申请号：US11231071

申请日：2005-09-20

申请人： Hitoshi Murofushi ,  Shiro Takeda

发明人： Hitoshi Murofushi ,  Shiro Takeda

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/22 ,  H01L33/30 ,  H01L33/387 ,  H01L2933/0016

摘要： In a semiconductor light emitting element, multiple bosses having a cylindrical shape and dispersed like islands, and recesses are formed on the upper surface of a window layer. A contact electrode is formed on the upper surface of the bosses. A transparent dielectric film is formed in the recesses. A transparent conductor film is formed on the transparent dielectric film and the contact electrode.

公开(公告)号：US08089078B2

公开(公告)日：2012-01-03

申请号：US12412902

申请日：2009-03-27

申请人： Hitoshi Murofushi ,  Koji Otsuka ,  Nobuhisa Sugimori ,  Hideyuki Watanabe

发明人： Hitoshi Murofushi ,  Koji Otsuka ,  Nobuhisa Sugimori ,  Hideyuki Watanabe

IPC分类号： H01L33/00

CPC分类号： H01L27/15 ,  H01L24/05 ,  H01L27/156 ,  H01L33/62 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2924/12032 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12043 ,  H05B33/089 ,  H01L2924/00

摘要： A light emitting device includes: a first semiconductor region; a second semiconductor region and third semiconductor region which are provided in the first semiconductor region; a first semiconductor light emitting element of which first electrode is electrically connected to a main surface of the second semiconductor region; a second semiconductor light emitting element of which third electrode is electrically connected to a main surface of the third semiconductor region; and a conductor which electrically connects the second electrode of the first semiconductor light emitting element and the third semiconductor region, and which electrically connects the second electrode and the third electrode through the third semiconductor region. In the light emitting device, the semiconductor light emitting elements are connected in series, and are directly connected to a power source.

摘要翻译： 发光器件包括：第一半导体区域; 设置在所述第一半导体区域中的第二半导体区域和第三半导体区域; 第一半导体发光元件，其第一电极电连接到第二半导体区域的主表面; 第二半导体发光元件，其第三电极与第三半导体区域的主表面电连接; 以及将第一半导体发光元件的第二电极和第三半导体区域电连接并且通过第三半导体区域电连接第二电极和第三电极的导体。 在发光装置中，半导体发光元件串联连接，并直接与电源连接。

公开(公告)号：US07560737B2

公开(公告)日：2009-07-14

申请号：US11231071

申请日：2005-09-20

申请人： Hitoshi Murofushi ,  Shiro Takeda

发明人： Hitoshi Murofushi ,  Shiro Takeda

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/42 ,  H01L33/22 ,  H01L33/30 ,  H01L33/387 ,  H01L2933/0016

摘要： In a semiconductor light emitting element, multiple bosses having a cylindrical shape and dispersed like islands, and recesses are formed on the upper surface of a window layer. A contact electrode is formed on the upper surface of the bosses. A transparent dielectric film is formed in the recesses. A transparent conductor film is formed on the transparent dielectric film and the contact electrode.

摘要翻译： 在半导体发光元件中，在窗口层的上表面上形成具有圆柱形并分散的岛状的多个凸起部。 接触电极形成在凸台的上表面上。 在凹部中形成透明电介质膜。 在透明电介质膜和接触电极上形成透明导体膜。

公开(公告)号：US07498609B2

公开(公告)日：2009-03-03

申请号：US11222369

申请日：2005-09-08

申请人： Hitoshi Murofushi ,  Hidekazu Aoyagi ,  Shiro Takeda ,  Yoshihiko Uchida

发明人： Hitoshi Murofushi ,  Hidekazu Aoyagi ,  Shiro Takeda ,  Yoshihiko Uchida

IPC分类号： H01L27/15

CPC分类号： H01L33/405 ,  H01L33/44

摘要： An LED comprises a semiconductor region including an active layer for generating light. An anode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. A reflective metal layer is bonded to the other major surface of the light-generating semiconductor region via an ohmic contact layer. Sufficiently thin to permit the passage of light therethrough, the ohmic contact layer is formed in an open-worked pattern to leave exposed part of the second major surface of the semiconductor region. A transparent, open-worked anti-alloying layer is interposed between the light-generating semiconductor region and the reflective metal layer, covering that part of the second major surface of the light-generating semiconductor region which is left exposed by the ohmic contact layer. The anti-alloying layer prevents the light-generating semiconductor region and reflective metal layer from alloying during heat treatments conducted in the curse of LED manufacture. A greater percentage of the light from the light-generating semiconductor region is reflected by the reflective metal layer for emission from the first major surface of the light-generating semiconductor region than in the absence of the anti-alloying layer.

摘要翻译： LED包括包括用于产生光的有源层的半导体区域。 阳极被布置在半导体区域的相对的主表面之一的中心上，从其发射光。 反射金属层经由欧姆接触层与发光半导体区域的另一个主表面接合。 足够薄以允许光通过其中，欧姆接触层以开放图案形成，以留下半导体区域的第二主表面的暴露部分。 在发光半导体区域和反射金属层之间插入透明的开放式抗合金层，覆盖由欧姆接触层露出的发光半导体区域的第二主表面的那部分。 防合金层在LED制造的诅咒中进行的热处理期间防止发光半导体区域和反射金属层的合金化。 来自发光半导体区域的较大百分比的光被来自发光半导体区域的第一主表面的反射金属层反射，而不是不存在抗合金化层。

公开(公告)号：US20050139842A1

公开(公告)日：2005-06-30

申请号：US11023947

申请日：2004-12-27

申请人： Hitoshi Murofushi ,  Shiro Takeda

发明人： Hitoshi Murofushi ,  Shiro Takeda

IPC分类号： H01L27/15 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00

CPC分类号： H01L33/44 ,  H01L33/56

摘要： Provided between a window layer and a protection layer is a light transmissive layer having a refraction index which is between the refraction indexes of the window layer and protection layer. The refraction index n2 of the light transmissive layer is, for example, within ±20% of the geometric average of the refraction indexes of the window layer and protection layer. The thickness T of the light transmissive layer satisfies {(λ/4n2)×(2m+1)−(λ/8n2)≦T≦(λ/4n2)×(2m+1)+(λ/8n2)} where λ represents the wavelength of emitted light and m represents a positive integer not smaller than 0.

摘要翻译： 提供在窗口层和保护层之间的是具有在窗口层和保护层的折射率之间的折射率的透光层。 透光层的折射率n 2 <2>例如在窗口层和保护层的折射率的几何平均值的±20％以内。 透光层的厚度T满足{（λ/ 4n×2×）×（2m + 1） - （λ/ 8n2）= T（λ 其中λ表示发射光的波长，m表示不小于0的正整数，其中λ表示发射光的波长，m表示不小于0的正整数 。

公开(公告)号：US20050110037A1

公开(公告)日：2005-05-26

申请号：US10987770

申请日：2004-11-12

申请人： Shiro Takeda ,  Hitoshi Murofushi

发明人： Shiro Takeda ,  Hitoshi Murofushi

IPC分类号： H01L29/24 ,  H01L33/00 ,  H01L33/46

CPC分类号： H01L33/0079 ,  H01L21/42 ,  H01L33/46

摘要： A light emitting diode has a semiconductor region for production of light. The semiconductor region is a lamination of two complementary layers, an n-type semiconductor layer, an active layer, a p-type semiconductor layer, another complementary layer, and an ohmic contact layer, in that order from a first major surface of the semiconductor layer, from which the light is emitted, toward a second. A reflective metal layer covers the second major surface of the semiconductor region via a transparent layer for reflecting the light that has traveled through the transparent layer from the semiconductor region. The transparent layer serves to prevent the semiconductor region and the reflective layer from alloying by heat treatments during the manufacture of the LED.

摘要翻译： 发光二极管具有用于产生光的半导体区域。 半导体区域是从半导体的第一主表面依次层叠两个互补层，n型半导体层，有源层，p型半导体层，另一互补层和欧姆接触层 光从其发射的层朝向第二层。 反射金属层经由透明层覆盖半导体区域的第二主表面，用于反射从半导体区域穿过透明层的光。 透明层用于防止半导体区域和反射层在制造LED期间通过热处理而合金化。