发明授权
- 专利标题: Light-emitting device
- 专利标题(中): 发光装置
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申请号: US11361144申请日: 2006-02-23
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公开(公告)号: US07560740B2公开(公告)日: 2009-07-14
- 发明人: Youichi Nagai , Koji Katayama , Hiroyuki Kitabayashi
- 申请人: Youichi Nagai , Koji Katayama , Hiroyuki Kitabayashi
- 申请人地址: JP Osaka
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JP Osaka
- 代理机构: Darby & Darby PC
- 优先权: JP2005-128245 20050426
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
A light-emitting device is presented which includes a GaN substrate 1; an n-type nitride semiconductor substrate layer (n-type AlxGa1-xN layer 3) disposed on a first main surface side of the GaN substrate 1; a p-type nitride semiconductor substrate layer (p-type AlxGa1-xN layer 5) disposed further away from the GaN substrate 1 compared to the n-type nitride semiconductor substrate layer; and a light-emitting layer (multi-quantum well (MQW) 4) positioned between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The p-type nitride semiconductor layer side is down-mounted. Also, light is released from a second main surface 1a, which the main surface opposite from the first main surface of the GaN substrate 1. A groove 80 is formed on the second main surface of the GaN substrate 1. The inner perimeter surface of the groove 80 includes a section (curved surface section) on which surface treatment is performed to smooth the inner perimeter surface.