摘要:
A light-emitting device includes a GaN substrate; a n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate compared to the n-type AlxGa1-xN layer; a multi-quantum well (MQW) positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In this light-emitting device, the p-type AlxGa1-xN layer side is down-mounted and light is emitted from the second main surface, which is the main surface of the GaN substrate opposite from the first main surface. hemispherical projections are formed on the second main surface of the GaN substrate.
摘要翻译:发光器件包括GaN衬底; 在GaN衬底的第一主表面侧上的n型Al x Ga 1-x N层; 与n型Al x Ga相比位于更远离GaN衬底的p型Al x Ga 1-x N层, SUB> 1-x N层; 定位在n型Al x Ga 1-x N层和p型Al x x N层之间的多量子阱(MQW) Ga 1-x N层。 在该发光装置中,p型Al x Ga 1-x N层侧被下放,从第二主表面射出光 GaN衬底的与第一主表面相对的主表面。 在GaN衬底的第二主表面上形成半球形突起。
摘要:
A light-emitting device is equipped with a GaN substrate; an n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate than the n-type AlxGa1-xN layer; and a multi-quantum well (MQW) positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light-emitting device, the p-type AlxGa1-xN layer side is down-mounted and light is emitted from a second main surface, which is the main surface opposite from the first main surface of the GaN substrate. The second main surface of the GaN substrate includes a region on which cavities and projections are formed. Also, the light-emitting device includes an n-electrode formed on the second main surface of the GaN substrate 1 and a protective film formed to cover the side wall of the n-electrode.
摘要翻译:发光装置配备有GaN衬底; 在GaN衬底的第一主表面侧上的n型Al x Ga 1-x N层; 位于距离GaN衬底更远的p型Al x Ga 1-x N层比n型Al x Ga > 1-x N层; 以及位于n型Al x Ga 1-x N层和p型Al x 1 / x N层之间的多量子阱(MQW) > Ga 1-x N层。 在发光装置中,p型Al x Ga 1-x N层侧被下放,从第二主表面发光, 与GaN衬底的第一主表面相对的主表面。 GaN衬底的第二主表面包括形成空腔和突起的区域。 此外,发光器件包括形成在GaN衬底1的第二主表面上的n电极和形成为覆盖n电极的侧壁的保护膜。
摘要:
A light-emitting device is presented which includes a GaN substrate 1; an n-type nitride semiconductor substrate layer (n-type AlxGa1-xN layer 3) disposed on a first main surface side of the GaN substrate 1; a p-type nitride semiconductor substrate layer (p-type AlxGa1-xN layer 5) disposed further away from the GaN substrate 1 compared to the n-type nitride semiconductor substrate layer; and a light-emitting layer (multi-quantum well (MQW) 4) positioned between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The p-type nitride semiconductor layer side is down-mounted. Also, light is released from a second main surface 1a, which the main surface opposite from the first main surface of the GaN substrate 1. A groove 80 is formed on the second main surface of the GaN substrate 1. The inner perimeter surface of the groove 80 includes a section (curved surface section) on which surface treatment is performed to smooth the inner perimeter surface.
摘要翻译:提出了一种发光器件,其包括GaN衬底1; 设置在GaN衬底1的第一主表面侧的n型氮化物半导体衬底层(n型Al x Ga 1-x N层3); 与n型(n型)相比,配置在比GaN衬底1更远的p型氮化物半导体衬底层(p型Al x Ga 1-x N层5) 氮化物半导体衬底层; 以及位于n型氮化物半导体层和p型氮化物半导体层之间的发光层(多量子阱(MQW)4)。 p型氮化物半导体层侧被下放。 此外,从与GaN衬底1的第一主表面相反的主表面的第二主表面1a释放光。在GaN衬底1的第二主表面上形成有沟槽80。 槽80包括在其上进行表面处理以平滑内周表面的部分(曲面部分)。
摘要:
A light-emitting device is presented which includes a GaN substrate 1; an n-type nitride semiconductor substrate layer (n-type AlxGa1-xN layer 3) disposed on a first main surface side of the GaN substrate 1; a p-type nitride semiconductor substrate layer (p-type AlxGa1-xN layer 5) disposed further away from the GaN substrate 1 compared to the n-type nitride semiconductor substrate layer; and a light-emitting layer (multi-quantum well (MQW) 4) positioned between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The p-type nitride semiconductor layer side is down-mounted. Also, light is released from a second main surface 1a, which the main surface opposite from the first main surface of the GaN substrate 1. A groove 80 is formed on the second main surface of the GaN substrate 1. The inner perimeter surface of the groove 80 includes a section (curved surface section) on which surface treatment is performed to smooth the inner perimeter surface.
摘要翻译:提出了一种发光器件,其包括GaN衬底1; 设置在GaN衬底1的第一主表面侧的n型氮化物半导体衬底层(n型Al x Ga 1-x N 3) 与n型氮化物半导体衬底层相比更远离GaN衬底1设置的p型氮化物半导体衬底层(p型Al x Ga 1-x N层5) 以及位于n型氮化物半导体层和p型氮化物半导体层之间的发光层(多量子阱(MQW)4)。 p型氮化物半导体层侧被下放。 此外,从与GaN衬底1的第一主表面相对的主表面的第二主表面1a释放光。在GaN衬底1的第二主表面上形成有沟槽80。 槽80包括在其上进行表面处理以平滑内周表面的截面(曲面部分)。
摘要:
A light-emitting device is equipped with a GaN substrate; an n-type AlxGa1-xN layer on a first main surface side of the GaN substrate; a p-type AlxGa1-xN layer positioned further away from the GaN substrate than the n-type AlxGa1-xN layer; and a multi-quantum well (MQW) positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light-emitting device, the p-type AlxGa1-xN layer side is down-mounted and light is emitted from a second main surface, which is the main surface opposite from the first main surface of the GaN substrate. The second main surface of the GaN substrate includes a region on which cavities and projections are formed. Also, the light-emitting device includes an n-electrode formed on the second main surface of the GaN substrate 1 and a protective film formed to cover the side wall of the n-electrode.
摘要翻译:发光装置配备有GaN衬底; 在GaN衬底的第一主表面侧上的n型Al x Ga 1-x N层; 位于比n型Al x Ga 1-x N层更远离GaN衬底的p型Al x Ga 1-x N层; 以及位于n型Al x Ga 1-x N层和p型Al x Ga 1-x N层之间的多量子阱(MQW)。 在发光器件中,p型Al x Ga 1-x N层侧被下放,并且从作为与GaN衬底的第一主表面相对的主表面的第二主表面发射光。 GaN衬底的第二主表面包括形成空腔和突起的区域。 此外,发光器件包括形成在GaN衬底1的第二主表面上的n电极和形成为覆盖n电极的侧壁的保护膜。
摘要:
A light-emitting device according to the present invention includes: a GaN substrate 1; a n-type AlxGa1-xN layer 3 on a first main surface side of the GaN substrate 1; a p-type AlxGa1-xN layer 5 positioned further away from the GaN substrate 1 compared to the n-type AlxGa1-xN layer 3; a multi-quantum well (MQW) 4 positioned between the n-type AlxGa1-xN layer 3 and the p-type AlxGa1-xN layer 5. In this light-emitting device, the p-type AlxGa1-xN layer 5 side is down-mounted and light is emitted from the second main surface 1a, which is the main surface of the GaN substrate 1 opposite from the first main surface. Hemispherical projections 82 are formed on the second main surface 1a of the GaN substrate 1.
摘要翻译:根据本发明的发光器件包括:GaN衬底1; 在GaN衬底1的第一主表面侧上的n型Al x Ga 1-x N层3; 位于更远离GaN衬底1的p型Al x Ga 1-x N层5与n型Al x N层5相比较, Ga 1-x N层3; 位于n型Al x Ga 1-x N层3和p型Al x N层3之间的多量子阱(MQW)4, SUB> Ga 1-x N层5。 在该发光器件中,p型Al x Ga 1-x N层5侧被下放,并且从第二主表面1a发射光 ,其是与第一主表面相对的GaN衬底1的主表面。 在GaN衬底1的第二主表面1a上形成半球形突起82。
摘要:
A method for manufacturing a semiconductor device according to the present invention includes the following step: a step (S10) of forming a GaN-based semiconductor layer, a step (S20) of forming an Al film on the GaN-based semiconductor layer, a step (S30, S40) of forming a mask layer composed of a material having a lower etching rate than that of the material constituting the Al film, a step (S50) of partially removing the Al film and the GaN-based semiconductor layer using the mask layer as a mask to form a ridge portion, a step (S60) of retracting the positions of the side walls at the ends of the Al film from the positions of the side walls of the mask layer, a step (S70) of forming a protection film composed of a material having a lower etching rate than that of the material constituting the Al film on the side surfaces of the ridge portion and on the upper surface of the mask layer, and a step (S80) of removing the Al film to remove the mask layer and the protection film formed on the upper surface of the mask layer.
摘要:
A method of manufacturing a semiconductor element of good characteristics at a reduced manufacturing cost is provided. The manufacturing method of the semiconductor element includes a GaN-containing semiconductor layer forming step, an electrode layer forming step, a step of forming an Al film on the GaN-containing semiconductor layer, a step of forming a mask layer made of a material of which etching rate is smaller than that of a material of the Al film, a step of forming a ridge portion using the mask layer as a mask, a step of retreating a position of a side wall of the Al film with respect to a position of a side wall of the mask layer, a step of forming, on the side surface of the ridge portion and the top surface of the mask layer, a protective film made of a material of which etching rate is smaller than that of the material forming the Al film, and a step of removing the Al film and thereby removing the mask layer and a portion of the protective film formed on the top surface of the mask layer.
摘要:
The present invention makes available AlxGa(1-x)As (0≦x≦1) substrates, epitaxial wafers for infrared LEDs, infrared LEDs, methods of manufacturing AlxGa(1-x)As substrates, methods of manufacturing epitaxial wafers for infrared LEDs, and methods of manufacturing infrared LEDs, whereby a high level of transmissivity is maintained, and through which, in the fabrication of semiconductor devices, the devices prove to have superior characteristics.An AlxGa(1-x)As substrate (10a) of the present invention is an AlxGa(1-x)As substrate (10a) furnished with an AlxGa(1-x)As layer (11) having a major surface (11a) and, on the reverse side from the major surface (11a), a rear face (11b), and is characterized in that in the AlxGa(1-x)As layer (11), the amount fraction x of Al in the rear face (11b) is greater than the amount fraction x of Al in the major surface (11a). In addition, the AlxGa(1-x)As substrate (10a) is further furnished with a GaAs substrate (13), contacting the rear face (11b) of the AlxGa(1-x)As layer (11).
摘要翻译:本发明提供了Al x Ga(1-x)As(0≦̸ x≦̸ 1)衬底,用于红外LED的外延晶片,红外LED,制造Al x Ga(1-x)As衬底的方法,制造用于红外LED的外延晶片的方法 以及制造红外LED的方法,由此保持高水平的透射率,并且在半导体器件的制造中证明该器件具有优异的特性。 本发明的Al x Ga(1-x)As衬底(10a)是具有主表面(11a)的Al x Ga(1-x)As层(11)的Al x Ga(1-x)As衬底(10a) 并且在与主表面(11a)相反的一侧具有背面(11b),其特征在于,在Al x Ga(1-x)As层(11)中,后面的Al的量分数x (11b)大于主表面(11a)中的Al的量分数x。 此外,Al x Ga(1-x)As衬底(10a)还具有与Al x Ga(1-x)As层(11)的背面(11b)接触的GaAs衬底(13)。
摘要:
Affords a semiconductor light-emitting device in which a decrease in external quantum efficiency has been minimized even at high current densities. In a semiconductor light-emitting device (11), a gallium nitride cladding layer (13) has a threading dislocation density of 1×107 cm−2 or less. An active region (17) has a quantum well structure (17a) consisted of a plurality of well layers (19) and a plurality of barrier layers (21), and the quantum well structure (17a) is provided so as to emit light having a peak wavelength within the wavelength range of 420 nm to 490 nm inclusive. The well layers (19) each include an un-doped InXGa1-XN (0
摘要翻译:提供了即使在高电流密度下也减小了外部量子效率的半导体发光器件。 在半导体发光器件(11)中,氮化镓覆层(13)的穿透位错密度为1×10 -7 cm -2以下。 有源区(17)具有由多个阱层(19)和多个阻挡层(21)组成的量子阱结构(17a),并且量子阱结构(17a)被设置为发射 具有在420nm至490nm的波长范围内的峰值波长的光。 阱层(19)各自包括未掺杂的In 1 X 1 Ga 1-X N(0