Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11637793Application Date: 2006-12-13
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Publication No.: US07560759B2Publication Date: 2009-07-14
- Inventor: Hee-Soo Kang , Jae-Man Yoon , Dong-Gun Park , Sang-Yeon Han , Young-Joon Ahn , Choong-Ho Lee
- Applicant: Hee-Soo Kang , Jae-Man Yoon , Dong-Gun Park , Sang-Yeon Han , Young-Joon Ahn , Choong-Ho Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR2004-6524 20040202
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A fin type MOSFET and a method of manufacturing the fin type MOSFET are disclosed. Gate structures in the fin type MOSFET are formed by a damascene process without a photolithography process. Impurities used to form a channel region are selectively implanted into portions of a semiconductor substrate adjacent to the gate structures.
Public/Granted literature
- US20070085127A1 Semiconductor device and method of manufacturing the same Public/Granted day:2007-04-19
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