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US07560765B2 Nonvolatile memory device and method of fabricating the same 有权
非易失性存储器件及其制造方法

Nonvolatile memory device and method of fabricating the same
Abstract:
A nonvolatile memory device includes a semiconductor substrate; a source region that is formed in the semiconductor substrate; a gate insulating film that is formed so as to partially overlap the source region on the semiconductor substrate; a floating gate that is formed on the gate insulating film so as to have a structure forming a uniform electric field in the portion that overlaps the source region; a control gate that is formed so as to be electrically isolated along one sidewall of the floating gate from an upper part of the floating gate, an inter-gate insulating film that is interposed between the floating gate and the control gate, and a drain region that is formed so as to be adjacent the other side of the control gate.
Abstract(Chinese):

非易失性存储器件包括半导体衬底; 源区域，其形成在所述半导体衬底中; 形成为与半导体衬底上的源极区域重叠的栅极绝缘膜; 形成在所述栅极绝缘膜上的浮栅，以具有在与所述源极区重叠的部分中形成均匀电场的结构; 形成为从浮置栅极的上部的浮动栅极的一个侧壁电绝缘的控制栅极，插入在浮置栅极和控制栅极之间的栅极间绝缘膜，以及漏极区域 其形成为与控制栅极的另一侧相邻。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
H01L29/788 ......带有浮栅的
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