发明授权
- 专利标题: Double-gated non-volatile memory and methods for forming thereof
- 专利标题(中): 双门非易失性存储器及其形成方法
-
申请号: US11341973申请日: 2006-01-27
-
公开(公告)号: US07563681B2公开(公告)日: 2009-07-21
- 发明人: Craig T. Swift , Thuy B. Dao , Michael A. Sadd
- 申请人: Craig T. Swift , Thuy B. Dao , Michael A. Sadd
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc.
- 当前专利权人: Freescale Semiconductor, Inc.
- 当前专利权人地址: US TX Austin
- 代理机构: Hamilton & Terrile, LLP
- 代理商 Michael Rocco Cannatti
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234
摘要:
A method for making a semiconductor device comprises providing a first wafer and providing a second wafer having a first side and a second side, the second wafer including a semiconductor structure, a first storage layer, and a layer of gate material, wherein the first storage layer is located between the semiconductor structure and the layer of gate material and closer to the first side of the second wafer than the semiconductor structure. The method further includes bonding the first side of the second wafer to the first wafer and cleaving away a first portion of the semiconductor structure to leave a layer of the semiconductor structure after the bonding. The method further includes forming a second storage layer over the layer of the semiconductor structure and forming a top gate over the second storage layer.