发明授权
- 专利标题： Method for manufacturing semiconductor substrate and semiconductor substrate
- 专利标题（中）： 半导体衬底和半导体衬底的制造方法
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申请号： US11147359申请日： 2005-06-08
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公开(公告)号： US07563693B2公开(公告)日： 2009-07-21
- 发明人: Yasumori Fukushima , Yutaka Takafuji
- 申请人： Yasumori Fukushima , Yutaka Takafuji
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Nixon & Vanderhye P.C.
- 优先权： JP2004-181527 20040618
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L21/322
摘要：
A method for manufacturing a semiconductor substrate comprises the steps of: forming a gate oxide film as an insulating layer on the surface of a semiconductor substrate; implanting boron ions for inhibiting the migration of a peeling substance in the semiconductor substrate to form an anti-diffusion layer in the semiconductor substrate; activating boron in the anti-diffusion layer by heat treatment; implanting hydrogen ions into the semiconductor substrate to form a peel layer in part of the semiconductor substrate at a side of the anti-diffusion layer opposite to the gate oxide film; bonding a glass substrate to the surface of the semiconductor substrate where the gate oxide film has been formed; and heat-treating the semiconductor substrate to separate part of the semiconductor substrate along the peel layer.
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