发明授权
- 专利标题: Method for producing SOI wafer
- 专利标题(中): 制造SOI晶圆的方法
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申请号: US10570353申请日: 2004-09-03
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公开(公告)号: US07563697B2公开(公告)日: 2009-07-21
- 发明人: Nobuyuki Morimoto , Hideki Nishihata
- 申请人: Nobuyuki Morimoto , Hideki Nishihata
- 申请人地址: JP Tokyo
- 专利权人: Sumco Corporation
- 当前专利权人: Sumco Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Greenblum and Bernstein P.L.C.
- 优先权: JP2003-314756 20030905; JP2003-314757 20030905
- 国际申请: PCT/JP2004/012822 WO 20040903
- 国际公布: WO2005/024925 WO 20050317
- 主分类号: H01L21/322
- IPC分类号: H01L21/322
摘要:
Hydrogen gas is ion-implanted into a silicon wafer for active layer via an insulating film, and thus ion-implanted wafer is then bonded with a supporting wafer via an insulating film interposed therebetween. This bonded wafer is heated to 500° C., so that a part of the bonded wafer is cleaved and separated, thereby producing an SOI wafer. Subsequently, thus-obtained SOI wafer is subjected to a heat treatment in an argon gas atmosphere. After that, the SOI wafer is subjected to an oxidation process in an oxidizing atmosphere, and thus formed oxide film is removed using an HF solution. Consequently, the surface of the SOI wafer is recrystallized and thus planarized.
公开/授权文献
- US20090023269A1 Method for producing soi wafer 公开/授权日:2009-01-22