公开(公告)号：US07851337B2

公开(公告)日：2010-12-14

申请号：US11801461

申请日：2007-05-09

申请人： Satoshi Murakami ,  Nobuyuki Morimoto ,  Hideki Nishihata ,  Akihiko Endo

发明人： Satoshi Murakami ,  Nobuyuki Morimoto ,  Hideki Nishihata ,  Akihiko Endo

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L21/425

CPC分类号： H01L21/76254

摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.

摘要翻译： 提供了即使在没有氧化膜的层叠晶片中也抑制诸如空隙或起泡的缺陷的发生的方法，其中将氢离子注入到其表面上没有氧化膜的有源层的晶片中以形成氢离子注入层 ，除了氢以外的离子被注入到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，将活性层用的晶片层叠在支撑基板用的晶片上， 活性层晶片在氢离子注入层处被剥离。

公开(公告)号：US07795117B2

公开(公告)日：2010-09-14

申请号：US11796005

申请日：2007-04-25

申请人： Satoshi Murakami ,  Nobuyuki Morimoto ,  Hideki Nishihata ,  Akihiko Endo

发明人： Satoshi Murakami ,  Nobuyuki Morimoto ,  Hideki Nishihata ,  Akihiko Endo

IPC分类号： H01L21/322 ,  H01L21/301

CPC分类号： H01L21/76254

摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not more than 50 nm in thickness to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate through the oxide film, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.

摘要翻译： 提供了一种抑制诸如空隙或气泡之类的缺陷的发生的方法，即使在具有比常规厚度的氧化膜更薄的氧化膜的层压晶片中，其中将氢离子注入到具有氧化物膜的有源层的晶片中 不大于50nm的厚度以形成氢离子注入层，并且注入氢以外的离子到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，以及用于 通过氧化膜将有源层层压到用于支撑衬底的晶片上，然后在氢离子注入层处剥离有源层晶片。

公开(公告)号：US20100068867A1

公开(公告)日：2010-03-18

申请号：US12557809

申请日：2009-09-11

申请人： Tatsumi Kusaba ,  Akihiko Endo ,  Hideki Nishihata ,  Nobuyuki Morimoto

发明人： Tatsumi Kusaba ,  Akihiko Endo ,  Hideki Nishihata ,  Nobuyuki Morimoto

IPC分类号： H01L21/762

CPC分类号： H01L21/187 ,  H01L21/76256

摘要： A bonded silicon wafer is produced by a method comprising an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiO2 layer exposing step; a step of removing the inner SiO2 layer; and a planarizing step of polishing a silicon wafer composite or subjecting the silicon wafer composite to a heat treatment in a reducing atmosphere (a second heat treatment step).

摘要翻译： 通过在具有指定晶片面的有源层硅晶片上的氧离子注入步骤的方法制造粘结硅晶片; 将用于有源层的硅晶片接合到用于支撑的硅晶片的步骤; 第一热处理步骤; 内部SiO 2层曝光步骤; 去除内部SiO 2层的步骤; 以及平面化工序，对硅晶片复合体进行研磨，或者对所述硅晶片复合体进行还原气氛的热处理（第二热处理工序）。

公开(公告)号：US07534728B2

公开(公告)日：2009-05-19

申请号：US11403410

申请日：2006-04-12

申请人： Hideki Nishihata ,  Tatsumi Kusaba ,  Nobuyuki Morimoto

发明人： Hideki Nishihata ,  Tatsumi Kusaba ,  Nobuyuki Morimoto

IPC分类号： H01L21/461

CPC分类号： H01L21/0206 ,  H01L21/76254

摘要： In the production process of an SOI substrate using a hydrogen ion implantation method, a process is provided for cleaning the substrate which can prevent formation of voids when bonding substrates and formation of blistering after exfoliation. In the process for cleaning, cleaning of the substrate is performed before performing hydrogen ion implantation. As the cleaning method, one or more of a combination selected from the group consisting of SC-1 cleaning, SC-1 cleaning+SC-2 cleaning, HF/O3 cleaning, and HF cleaning+O3 cleaning, can be used.

摘要翻译： 在使用氢离子注入法的SOI衬底的制造方法中，提供了清洗衬底的过程，其可以防止在接合衬底时形成空隙并且在剥离之后形成起泡。 在清洗过程中，在进行氢离子注入之前进行基板的清洗。 作为清洗方法，可以使用选自SC-1清洗，SC-1清洗+ SC-2清洗，HF / O3清洗和HF清洗+ O3清洗的组合中的一种或多种。

公开(公告)号：US20090075453A1

公开(公告)日：2009-03-19

申请号：US12270753

申请日：2008-11-13

申请人： Satoshi MURAKAMI ,  Nobuyuki Morimoto ,  Hideki Nishihata ,  Akihiko Endo

发明人： Satoshi MURAKAMI ,  Nobuyuki Morimoto ,  Hideki Nishihata ,  Akihiko Endo

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not more than 50 nm in thickness to form a hydrogen ion implanted layer, and ions other than hydrogen are implanted up to a position that a depth from the surface side the hydrogen ion implantation is shallower than the hydrogen ion implanted layer, and the wafer for active layer is laminated onto a wafer for support substrate through the oxide film, and then the wafer for active layer is exfoliated at the hydrogen ion implanted layer.

摘要翻译： 提供了一种抑制诸如空隙或气泡之类的缺陷的发生的方法，即使在具有比常规厚度的氧化膜更薄的氧化膜的层压晶片中，其中将氢离子注入到具有氧化物膜的有源层的晶片中 不大于50nm的厚度以形成氢离子注入层，并且注入氢以外的离子到从氢离子注入的表面侧的深度比氢离子注入层浅的位置，以及用于 通过氧化膜将有源层层压到用于支撑衬底的晶片上，然后在氢离子注入层处剥离有源层晶片。

公开(公告)号：US20080200010A1

公开(公告)日：2008-08-21

申请号：US10569942

申请日：2004-09-01

申请人： Akihiko Endo ,  Hideki Nishihata

发明人： Akihiko Endo ,  Hideki Nishihata

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A thickness of silicon oxide film of a wafer for active layer is controlled to be thinner than that of buried silicon oxide film. Consequently, uniformity in film thickness of the active layer of a bonded wafer is improved even if a variation in the in-plane thickness of the silicon oxide film is large at a time of ion implantation. Furthermore, since the silicon oxide film is rather thinner and thereby the ion implantation depth is relatively deeper, damages to the active layer and the buried silicon oxide film caused by the ion implantation can be reduced.

摘要翻译： 用于有源层的晶片的氧化硅膜的厚度被控制为比掩埋的氧化硅膜薄。 因此，即使离子注入时氧化硅膜的面内厚度的变化大，接合晶片的有源层的膜厚均匀性也提高。 此外，由于氧化硅膜相当薄，因此离子注入深度相对较深，可以减少由离子注入引起的对有源层和掩埋氧化硅膜的损伤。

公开(公告)号：US07358147B2

公开(公告)日：2008-04-15

申请号：US10585522

申请日：2004-12-28

申请人： Nobuyuki Morimoto ,  Hideki Nishihata

发明人： Nobuyuki Morimoto ,  Hideki Nishihata

IPC分类号： H01L21/76

CPC分类号： H01L21/76254 ,  H01L21/302

摘要： There is provided a process for producing an SOI wafer in which, when producing an SOI wafer using Smart Cut technology, the surface can be smoothed after cleaving, the thickness of the SOI layer can be reduced, and the film thickness of the SOI wafer can be made uniform. In this process for producing an SOI wafer, hydrogen gas ions are implanted via an oxide film in a silicon wafer that is to be used for an active layer, so that an ion implanted layer is formed in the silicon bulk. Next, this active layer silicon wafer is bonded via an insulating film to a base wafer. By heating this base wafer, a portion thereof can be cleaved using the ion implanted layer as a boundary, thereby forming an SOI wafer. After the cleaving has been performed using the ion implanted layer as a boundary, the SOI wafer undergoes oxidization processing in an oxidizing atmosphere. This oxide film is then removed by, for example, HF solution. Thereafter, the SOI wafer undergoes heat processing for approximately three hours in an argon gas atmosphere at 1100° C. or more. As a result, the root mean square roughness of the SOI wafer surface is improved to 0.1 nm or less.

摘要翻译： 提供了一种制造SOI晶片的方法，其中当使用Smart Cut技术制造SOI晶片时，可以在切割之后平滑表面，可以降低SOI层的厚度，并且可以将SOI晶片的膜厚度 制服 在该SOI晶片的制造方法中，通过氧化膜将氧气离子注入到用于有源层的硅晶片中，从而在硅体中形成离子注入层。 接下来，该有源层硅晶片通过绝缘膜与基底晶片接合。 通过加热该基底晶片，可以使用离子注入层作为边界来切割其一部分，从而形成SOI晶片。 在使用离子注入层作为边界进行切割之后，SOI晶片在氧化气氛中进行氧化处理。 然后通过例如HF溶液除去该氧化膜。 此后，在1100℃以上的氩气气氛中，SOI晶片进行大约3小时的热处理。 结果，SOI晶片表面的均方根粗糙度提高到0.1nm以下。

公开(公告)号：US20070190737A1

公开(公告)日：2007-08-16

申请号：US10585522

申请日：2004-12-28

申请人： Nobuyuki Morimoto ,  Hideki Nishihata

发明人： Nobuyuki Morimoto ,  Hideki Nishihata

IPC分类号： H01L21/76

CPC分类号： H01L21/76254 ,  H01L21/302

摘要： There is provided a process for producing an SOI wafer in which, when producing an SOI wafer using Smart Cut technology, the surface can be smoothed after cleaving, the thickness of the SOI layer can be reduced, and the film thickness of the SOI wafer can be made uniform. In this process for producing an SOI wafer, hydrogen gas ions are implanted via an oxide film in a silicon wafer that is to be used for an active layer, so that an ion implanted layer is formed in the silicon bulk. Next, this active layer silicon wafer is bonded via an insulating film to a base wafer. By heating this base wafer, a portion thereof can be cleaved using the ion implanted layer as a boundary, thereby forming an SOI wafer. After the cleaving has been performed using the ion implanted layer as a boundary, the SOI wafer undergoes oxidization processing in an oxidizing atmosphere. This oxide film is then removed by, for example, HF solution. Thereafter, the SOI wafer undergoes heat processing for approximately three hours in an argon gas atmosphere at 1100° C. or more. As a result, the root mean square roughness of the SOI wafer surface is improved to 0.1 nm or less.

摘要翻译： 提供了一种制造SOI晶片的方法，其中当使用Smart Cut技术制造SOI晶片时，可以在切割之后平滑表面，可以降低SOI层的厚度，并且可以将SOI晶片的膜厚度 制服 在该SOI晶片的制造方法中，通过氧化膜将氧气离子注入到用于有源层的硅晶片中，从而在硅体中形成离子注入层。 接下来，该有源层硅晶片通过绝缘膜与基底晶片接合。 通过加热该基底晶片，可以使用离子注入层作为边界来切割其一部分，从而形成SOI晶片。 在使用离子注入层作为边界进行切割之后，SOI晶片在氧化气氛中进行氧化处理。 然后通过例如HF溶液除去该氧化膜。 此后，在1100℃以上的氩气气氛中，SOI晶片进行大约3小时的热处理。 结果，SOI晶片表面的均方根粗糙度提高到0.1nm以下。

公开(公告)号：US20060266437A1

公开(公告)日：2006-11-30

申请号：US10570354

申请日：2004-09-02

申请人： Nobuyuki Morimoto ,  Hideki Nishihata

发明人： Nobuyuki Morimoto ,  Hideki Nishihata

IPC分类号： C23C8/36

CPC分类号： H01L21/76254

摘要： Hydrogen gas is ion-implanted into a wafer for active layer via an oxide film. The wafer for active layer is bonded with a supporting wafer using the oxide film as the bonding surface. The bonded wafer is subjected to a heat treatment at the temperature in a range of 400° C. to 1000° C. As a result of this heat treatment, the bonded wafer is cleaved at the site of ion-implanted layer as the interface thereby producing an SOI wafer. In this heat treatment for cleavage, the temperature difference within the surface of the bonded wafer is controlled to be within 40° C. Consequently, the wafer can be cleaved and separated completely across its entire surface at the site of the ion-implanted layer as the interface without leaving any regions uncleaved.

摘要翻译： 通过氧化膜将氢气离子注入用于活性层的晶片。 使用氧化膜作为接合面，将有源层的晶片与支撑晶片接合。 接合的晶片在400℃至1000℃的温度下进行热处理。作为该热处理的结果，接合晶片在离子注入层的位置处被切割为界面 制造SOI晶片。 在这种用于裂解的热处理中，将接合晶片的表面内的温度差控制在40℃以内。因此，可以在离子注入层的位置处将晶片在其整个表面上完全切割和分离，如 该界面没有离开任何地区未分割。

公开(公告)号：US07858494B2

公开(公告)日：2010-12-28

申请号：US11466964

申请日：2006-08-24

申请人： Akihiko Endo ,  Hideki Nishihata ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Hideki Nishihata ,  Nobuyuki Morimoto

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/762 ,  H01L21/76254 ,  H01L21/76256 ,  H01L27/1203

摘要： Adhesion of particles due to static buildup during a laminated substrate manufacturing process is constrained, so as to reduce generation of a void or a blister in a lamination step and improve yield. A laminate 13 is formed by superimposing a first semiconductor substrate 11, which is to be an active layer, on a second semiconductor substrate 12, which is to be a supporting substrate, via an oxide film 11a. Electric resistance of either or both of the first and second semiconductor substrates 11 and 12 before superimposition is 0.005-0.2 Ωcm.

摘要翻译： 在层叠基板制造过程中由于静电积聚引起的颗粒的粘附受到限制，从而减少层压步骤中的空隙或泡罩的产生并提高产量。 通过将作为有源层的第一半导体基板11经由氧化膜11a叠加在作为支撑基板的第二半导体基板12上而形成层叠体13。 叠加之前的第一和第二半导体基板11和12中的任一个或两者的电阻为0.005-0.2Ω·cm。