发明授权
- 专利标题： Method of performing a double-sided process
- 专利标题（中）： 执行双面过程的方法
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申请号： US11850678申请日： 2007-09-06
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公开(公告)号： US07566574B2公开(公告)日： 2009-07-28
- 发明人: Chen-Hsiung Yang
- 申请人： Chen-Hsiung Yang
- 申请人地址： TW Yang-Mei, Taoyuan Hsien
- 专利权人： Touch Micro-System Technology Inc.
- 当前专利权人： Touch Micro-System Technology Inc.
- 当前专利权人地址： TW Yang-Mei, Taoyuan Hsien
- 代理商 Winston Hsu
- 优先权： TW94139788A 20051111
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method of performing a double-sided process is provided. First, a wafer having a structural pattern disposed on the front surface is provided. Following that, a plurality of front scribe lines are defined on the structural pattern, and a filling layer is filled into the front scribe lines. Subsequently, the structural pattern is bonded to a carrier wafer with a bonding layer, and a plurality of back scribe lines are defined on the back surface of the wafer. Finally, the filling layer filled in the front scribe lines is removed.
公开/授权文献
- US20070298582A1 METHOD OF PERFORMING A DOUBLE-SIDED PROCESS 公开/授权日：2007-12-27