发明授权
- 专利标题： Method to reduce seedlayer topography in BICMOS process
- 专利标题（中）： 减少BICMOS过程中种子层形貌的方法
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申请号： US10581639申请日： 2004-12-09
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公开(公告)号： US07566919B2公开(公告)日： 2009-07-28
- 发明人: Johannes Josephus Theodorus Marinus Donkers , Petrus Hubertus Cornelis Magnee , Eddy Kunnen , Francois Igor Neuilly
- 申请人： Johannes Josephus Theodorus Marinus Donkers , Petrus Hubertus Cornelis Magnee , Eddy Kunnen , Francois Igor Neuilly
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 代理商 Peter Zawilski
- 国际申请： PCT/IB2004/052742 WO 20041209
- 国际公布： WO2005/059989 WO 20050630
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for forming an epitaxial base layer in a bipolar device. The method comprises the steps of: providing a structure having a field isolation oxide region (12) adjacent to an active silicon region (10); forming a silicon nitride/silicon stack (14, 16) above the field isolation oxide region (12), wherein the silicon nitride/silicon stack (14, 16) includes a top layer of silicon (14) and a bottom layer of silicon nitride (16); performing an etch to the silicon nitride/silicon stack (14, 16) to form a stepped seed layer, wherein the top layer of silicon is etched laterally at the same time the bottom layer of silicon nitride is etched; and growing an Si/SiGe/Si stack (20) over the stepped seed layer and active region (10).
公开/授权文献
- US20070111485A1 Method to reduce seedlayer topography in bicmos process 公开/授权日：2007-05-17
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