Invention Grant
US07569488B2 Methods of making a MEMS device by monitoring a process parameter
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通过监控工艺参数制造MEMS器件的方法
- Patent Title: Methods of making a MEMS device by monitoring a process parameter
- Patent Title (中): 通过监控工艺参数制造MEMS器件的方法
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Application No.: US11767430Application Date: 2007-06-22
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Publication No.: US07569488B2Publication Date: 2009-08-04
- Inventor: Marjorio Rafanan
- Applicant: Marjorio Rafanan
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee: QUALCOMM MEMS Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
Embodiments of the present invention relate to methods and systems for making a microelectromechanical system MEMS device comprising supplying an etchant to etch one or more sacrificial structures of the system in a chamber. A process parameter relating to the pressure within the chamber is monitored as a function of time to provide an indication of the extent of the etching of the one or more sacrificial structures.
Public/Granted literature
- US20080318344A1 INDICATION OF THE END-POINT REACTION BETWEEN XeF2 AND MOLYBDENUM Public/Granted day:2008-12-25
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