发明授权
US07569503B2 Contact doping and annealing systems and processes for nanowire thin films
失效
接触纳米线薄膜的掺杂和退火系统和工艺
- 专利标题： Contact doping and annealing systems and processes for nanowire thin films
- 专利标题（中）： 接触纳米线薄膜的掺杂和退火系统和工艺
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申请号： US11271488申请日： 2005-11-10
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公开(公告)号： US07569503B2公开(公告)日： 2009-08-04
- 发明人: Yaoling Pan , David P. Stumbo
- 申请人： Yaoling Pan , David P. Stumbo
- 申请人地址： US CA Palo Alto
- 专利权人： Nanosys, Inc.
- 当前专利权人： Nanosys, Inc.
- 当前专利权人地址： US CA Palo Alto
- 代理商 Andrew L. Filler
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
Embodiments of the present invention are provided for improved contact doping and annealing systems and processes. In embodiments, a plasma ion immersion implantation (PIII) process is used for contact doping of nanowires and other nanoelement based thin film devices. According to further embodiments of the present invention, pulsed laser annealing using laser energy at relatively low laser fluences below about 100 mJ/cm2 (e.g., less than about 50 mJ/cm2, e.g., between about 2 and 18 mJ/cm2) is used to anneal nanowire and other nanoelement-based devices on substrates, such as low temperature flexible substrates, e.g., plastic substrates.
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