Invention Grant
- Patent Title: Phase-change memory and fabrication method thereof
- Patent Title (中): 相变存储器及其制造方法
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Application No.: US11552492Application Date: 2006-10-24
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Publication No.: US07569845B2Publication Date: 2009-08-04
- Inventor: Yi-Chan Chen , Wen-Han Wang
- Applicant: Yi-Chan Chen , Wen-Han Wang
- Applicant Address: TW Hsinchu TW Hsin-Chu TW Taoyuan TW Hsinchu TW Hsinchu
- Assignee: Industrial Technology Research Institute,Powerchip Semiconductor Corp.,Nanya Technology Corporation,ProMOS Technologies Inc.,Winbond Electronics Corp.
- Current Assignee: Industrial Technology Research Institute,Powerchip Semiconductor Corp.,Nanya Technology Corporation,ProMOS Technologies Inc.,Winbond Electronics Corp.
- Current Assignee Address: TW Hsinchu TW Hsin-Chu TW Taoyuan TW Hsinchu TW Hsinchu
- Agency: Quintero Law Office
- Priority: TW95129774A 20060814
- Main IPC: H01L47/00
- IPC: H01L47/00

Abstract:
A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.
Public/Granted literature
- US20080035961A1 PHASE-CHANGE MEMORY AND FABRICATION METHOD THEREOF Public/Granted day:2008-02-14
Information query
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