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31 条记录 (耗时 0.023 秒)

    SOLAR CELL
    1.
    发明申请
    SOLAR CELL 审中-公开
    太阳能电池

    公开(公告)号：US20100154882A1

    公开(公告)日：2010-06-24

    申请号：US12403353

    申请日：2009-03-12

    申请人： Yi-Chan Chen ,  Hsuan-Yin Fang

    发明人： Yi-Chan Chen ,  Hsuan-Yin Fang

    IPC分类号： H01L31/04

    CPC分类号： H01L31/074 ,  Y02E10/50

    摘要： A solar cell is provided and includes a front contact, a first conductive type layer, an intrinsic (I) layer, a second conductive type layer, and a back contact. The first conductive type layer is a material layer of low refractive index which has a refractive index lower than 3. The material layer with low refractive index was used to increase light transmittance of the solar cell and decrease reflection which occurs at interfaces in the solar cell, and thus the solar cell has an optimum sunlight utility rate. Therefore, the solar cell has a large short circuit current (Jsc) and high efficiency.

    摘要翻译： 提供太阳能电池，其包括前触点，第一导电类型层，本征（I）层，第二导电类型层和背接触。 第一导电型层是折射率低于3的低折射率材料层。使用低折射率的材料层来增加太阳能电池的透光率并减少在太阳能电池的界面处发生的反射 ，因此太阳能电池具有最佳的太阳能利用率。 因此，太阳能电池具有大的短路电流（Jsc）和高效率。

    METHOD OF FABRICATING A PHASE-CHANGE MEMORY
    2.
    发明申请
    METHOD OF FABRICATING A PHASE-CHANGE MEMORY 有权
    制作相变存储器的方法

    公开(公告)号：US20100047960A1

    公开(公告)日：2010-02-25

    申请号：US12611066

    申请日：2009-11-02

    申请人： Yi-Chan Chen ,  Wen-Han Wang

    发明人： Yi-Chan Chen ,  Wen-Han Wang

    IPC分类号： H01L21/06

    CPC分类号： H01L45/124 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1691

    摘要： A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.

    摘要翻译： 相变存储器包括形成在基板上的底部电极。 在底部电极上形成第一隔离层。 顶部电极形成在隔离层上。 第一相变材料形成在第一隔离层中，其中顶部电极和底部电极经由第一相变材料电连接。 由于相变材料的直径可以小于光刻工艺的分辨率极限，所以可以减小相变材料图案的状态转换的工作电流，从而降低相变存储器的功耗 设备。

    SOLAR CELL TESTING APPARATUS
    4.
    发明申请
    SOLAR CELL TESTING APPARATUS 有权
    太阳能电池测试装置

    公开(公告)号：US20090278546A1

    公开(公告)日：2009-11-12

    申请号：US12395712

    申请日：2009-03-02

    申请人： Yi-Chan Chen

    发明人： Yi-Chan Chen

    IPC分类号： G01R31/26 ,  G01R31/00

    CPC分类号： H02S50/10

    摘要： A solar cell testing apparatus including a stage, a movable chuck, a light source and a plurality of probes is provided. The movable chuck is disposed on the stage and capable of carrying a sample sheet to move. The sample sheet has a light incident side, a rear side opposite to the light incident side, and a plurality of electrodes disposed on the rear side. The light source is disposed above the stage and capable of providing testing light to the light incident side of the sample sheet. The probes are located on the rear side of the sample sheet and capable of contacting the electrodes of the sample sheet. The present invention not only can be used to test a substrate type solar cell, but also can be used to test a superstrate type solar cell.

    摘要翻译： 提供了一种太阳能电池测试装置，其包括载物台，活动卡盘，光源和多个探针。 可移动卡盘设置在台架上，并且能够携带样品片移动。 样品片具有光入射侧，与光入射侧相对的后侧，以及设置在后侧的多个电极。 光源设置在平台上方，并能够向样品片的光入射侧提供测试光。 探针位于样品片的后侧，能够接触样品片的电极。 本发明不仅可用于测试基板型太阳能电池，而且还可用于测试上覆型太阳能电池。

    PHASE-CHANGE MEMORY AND FABRICATION METHOD THEREOF
    5.
    发明申请
    PHASE-CHANGE MEMORY AND FABRICATION METHOD THEREOF 有权

    公开(公告)号：US20080311699A1

    公开(公告)日：2008-12-18

    申请号：US12187345

    申请日：2008-08-06

    申请人： Yi-Chan Chen ,  Wen-Han Wang

    发明人： Yi-Chan Chen ,  Wen-Han Wang

    IPC分类号： H01L21/28

    CPC分类号： H01L45/124 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1691

    摘要： A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.

    PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
    6.
    发明申请
    PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    相变存储器件及其制造方法

    公开(公告)号：US20080164504A1

    公开(公告)日：2008-07-10

    申请号：US11857396

    申请日：2007-09-18

    申请人： Wei-Su Chen ,  Yi-Chan Chen ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Der-Sheng Chao ,  Chih-Wei Chen ,  Ming-Jinn Tsai

    发明人： Wei-Su Chen ,  Yi-Chan Chen ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Der-Sheng Chao ,  Chih-Wei Chen ,  Ming-Jinn Tsai

    IPC分类号： H01L47/00 ,  H01L21/76

    CPC分类号： H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/124 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1691

    摘要： A phase change memory device is provided. The phase change memory device comprises a substrate. An electrode layer is on the substrate. A phase change memory structure is on the electrode layer and electrically connected to the electrode layer, wherein the phase change memory structure comprises a cup-shaped heating electrode on the electrode layer. An insulating layer is on the cup-shaped heating electrode along a first direction covering a portion of the cup-shaped heating electrode. An electrode structure is on the cup-shaped heating electrode along a second direction covering a portion of the insulating layer and the cup-shaped heating electrode. A pair of double spacers is on a pair of sidewalls of the electrode structure covering a portion of the cup-shaped heating electrode, wherein the double spacer comprises a phase change material spacer and an insulating material spacer on a sidewall of the phase change material spacer.

    摘要翻译： 提供了相变存储器件。 相变存储器件包括衬底。 电极层位于基板上。 相变存储器结构在电极层上并电连接到电极层，其中相变存储器结构包括在电极层上的杯形加热电极。 绝缘层沿着覆盖杯状加热电极的一部分的第一方向位于杯状加热电极上。 电极结构沿着覆盖绝缘层和杯状加热电极的一部分的第二方向位于杯状加热电极上。 一对双间隔物位于电极结构的一对侧壁上，覆盖杯状加热电极的一部分，其中双间隔物包括相变材料间隔物和在相变材料间隔物的侧壁上的绝缘材料间隔物 。

    PHASE-CHANGE MEMORY AND FABRICATION METHOD THEREOF
    7.
    发明申请
    PHASE-CHANGE MEMORY AND FABRICATION METHOD THEREOF 有权
    相变记忆及其制造方法

    公开(公告)号：US20080035961A1

    公开(公告)日：2008-02-14

    申请号：US11552492

    申请日：2006-10-24

    申请人： Yi-Chan Chen ,  Wen-Han Wang

    发明人： Yi-Chan Chen ,  Wen-Han Wang

    IPC分类号： H01L27/148

    CPC分类号： H01L45/124 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1691

    摘要： A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.

    摘要翻译： 相变存储器包括形成在基板上的底部电极。 在底部电极上形成第一隔离层。 顶部电极形成在隔离层上。 第一相变材料形成在第一隔离层中，其中顶部电极和底部电极经由第一相变材料电连接。 由于相变材料的直径可以小于光刻工艺的分辨率极限，所以可以减小相变材料图案的状态转换的工作电流，从而降低相变存储器的功耗 设备。

    LCD source driver for improving electrostatic discharge
    9.
    发明申请
    LCD source driver for improving electrostatic discharge 有权
    LCD源驱动器，用于改善静电放电

    公开(公告)号：US20070057327A1

    公开(公告)日：2007-03-15

    申请号：US11477360

    申请日：2006-06-30

    申请人： Yi-Chan Chen

    发明人： Yi-Chan Chen

    IPC分类号： H01L23/62

    CPC分类号： H01L23/60 ,  H01L23/5286 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In an LCD source driver, to enhance the ESD performance thereof, there is provided a path in a device area penetrating thereacross such that an internal power wire or an internal ground wire to connect between an output pad and a power-rail ESD clamp circuit on two margins, respectively, of the LCD source driver could pass through the path to shorten the internal power wire or the internal ground wire and thereby to avoid chip area increase for the ESD mechanism.

    摘要翻译： 在LCD源驱动器中，为了提高其ESD性能，提供了穿过其的器件区域中的路径，使得内部电源线或内部接地线在输出焊盘和电源轨ESD ESD钳位电路之间连接 LCD驱动器的两个边缘分别可以通过路径来缩短内部电源线或内部接地线，从而避免ESD机制的芯片面积增加。