发明授权
- 专利标题： Silicon-rich-oxide white light photodiode
- 专利标题（中）： 富硅氧化物白光光电二极管
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申请号： US11416146申请日： 2006-05-03
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公开(公告)号： US07569864B2公开(公告)日： 2009-08-04
- 发明人: Tsun-Neng Yang , Shan-Ming Lan , Wei-Yang Ma
- 申请人： Tsun-Neng Yang , Shan-Ming Lan , Wei-Yang Ma
- 申请人地址： TW Taoyuan
- 专利权人： Atomic Energy Council-Institute of Nuclear Energy Research
- 当前专利权人： Atomic Energy Council-Institute of Nuclear Energy Research
- 当前专利权人地址： TW Taoyuan
- 主分类号： H01L31/12
- IPC分类号： H01L31/12 ; H01L31/00
摘要：
A white light photodiode has a film layer and an ultraviolet (UV) photodiode. The film layer is made of an oxide rich in silicon; and is formed through a chemical vapor deposition. A white light can be generated by exciting the film layer with a UV light from the UV photodiode.
公开/授权文献
- US20070257285A1 Silicon-rich-oxide white light photodiode 公开/授权日：2007-11-08
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