发明授权
- 专利标题: Reduced area intersection between electrode and programming element
- 专利标题(中): 电极与编程元件之间的减少交点
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申请号: US10438146申请日: 2003-05-13
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公开(公告)号: US07572666B2公开(公告)日: 2009-08-11
- 发明人: Charles H. Dennison , Alice T. Wang , Kanaiyalal Chaturbhai Patel , Jenn C. Chow
- 申请人: Charles H. Dennison , Alice T. Wang , Kanaiyalal Chaturbhai Patel , Jenn C. Chow
- 代理机构: Trop, Pruner & Hu, P.C.
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method comprising forming a first dielectric layer over an electrode formed to a first contact point on a substrate, the electrode having a contact area; patterning the first dielectric layer into a body, a thickness of the first dielectric layer defining a side wall; forming at least one spacer along the side wall of the first dielectric body, the at least one spacer overlying a portion of the contact area; forming a second dielectric layer on the contact area; removing the at least one spacer; and forming a material comprising a second contact point to the contact area. An apparatus comprising a volume of programmable material; a conductor; and an electrode disposed between the volume of programmable material and the conductor, the electrode having a contact area coupled to the volume of programmable material.
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