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US07573058B2 Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories 有权
相变材料，具有相同的相变随机存取存储器和操作相变随机存取存储器的方法

Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories
Abstract:
A phase change memory device includes a switch and a storage node connected to the switch. The storage node includes a first electrode, a phase change layer and a second electrode. The phase change layer is formed of an InSbTe compound doped with Ge. In a method of operating a phase change memory including a switch and a storage node, the switch is maintained in an on state, and a first current is applied to the storage node.
Abstract(Chinese):

相变存储器件包括开关和连接到开关的存储节点。 存储节点包括第一电极，相变层和第二电极。 相变层由掺杂有Ge的InSbTe化合物形成。 在操作包括开关和存储节点的相变存储器的方法中，将开关保持在接通状态，并且将第一电流施加到存储节点。

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