发明授权
- 专利标题: Semiconductor device and method for forming the same
- 专利标题(中): 半导体装置及其形成方法
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申请号: US11775130申请日: 2007-07-09
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公开(公告)号: US07573123B2公开(公告)日: 2009-08-11
- 发明人: Young-Soo Park , Kyoo-Chul Cho , Hee-Sung Kim , Tae-Soo Kang , Sam-Jong Choi
- 申请人: Young-Soo Park , Kyoo-Chul Cho , Hee-Sung Kim , Tae-Soo Kang , Sam-Jong Choi
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Marger Johnson & McCollom, P.C.
- 优先权: KR10-2006-0064520 20060710
- 主分类号: H01L29/04
- IPC分类号: H01L29/04 ; H01L31/036
摘要:
Provided are a semiconductor device, and a method of forming the same. In one embodiment, the semiconductor device includes a semiconductor layer, first and second semiconductor fins, an insulating layer, and an inter-fin connection member. The first and second semiconductor fins are placed on the semiconductor layer, and have different crystal directions. The first semiconductor fin is connected to the semiconductor layer, and has the equivalent crystal direction as that of the semiconductor layer. The insulating layer is interposed between the second semiconductor fin and the semiconductor layer, and has an opening in which the first semiconductor fin is inserted. The inter-fin connection member connects the first semiconductor fin and the second semiconductor fin together on the insulating layer.
公开/授权文献
- US20080014722A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 公开/授权日:2008-01-17