发明授权
- 专利标题: RTD-HBT differential oscillator topology
- 专利标题(中): RTD-HBT差分振荡器拓扑
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申请号: US11463669申请日: 2006-08-10
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公开(公告)号: US07573343B2公开(公告)日: 2009-08-11
- 发明人: Kyoung-Hoon Yang , Sun-Kyu Choi , Yongsik Jeong
- 申请人: Kyoung-Hoon Yang , Sun-Kyu Choi , Yongsik Jeong
- 申请人地址: KR Daejeon
- 专利权人: Korea Advanced Institute of Science and Technology
- 当前专利权人: Korea Advanced Institute of Science and Technology
- 当前专利权人地址: KR Daejeon
- 代理机构: Greenblum & Bernstein, P.L.C.
- 优先权: KR10-2006-0073845 20060804
- 主分类号: H03B7/14
- IPC分类号: H03B7/14 ; H03K3/315
摘要:
The new RTD-HBT differential oscillator circuit topology is proposed. At the nodes of the inductors and varactors in the conventional differential oscillator topology, each the RTD is attached to increase the magnitude of the negative conductance, which results in performance improvement in both the RF output power and phase noise. And, the differential sinusoidal voltage waveform which is essential for the wireless communication system are generated. In addition, the DC power consumption RTD-HBT differential oscillator circuit is similar to the conventional HBT differential oscillator due to the small DC power consumption performance of the RTD.
公开/授权文献
- US20080042762A1 RTD-HBT DIFFERENTIAL OSCILLATOR TOPOLOGY 公开/授权日:2008-02-21
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