发明授权
- 专利标题： Method and device for continuously measuring silicon island elevation
- 专利标题（中）： 连续测量硅岛高程的方法和装置
-
申请号： US12197669申请日： 2008-08-25
-
公开(公告)号： US07573587B1公开(公告)日： 2009-08-11
- 发明人: Zheng Lu , Steven L. Kimbel , Robert H. Fuerhoff , Joseph C. Holzer
- 申请人： Zheng Lu , Steven L. Kimbel , Robert H. Fuerhoff , Joseph C. Holzer
- 申请人地址： US MO St. Peters
- 专利权人： MEMC Electronic Materials, Inc.
- 当前专利权人： MEMC Electronic Materials, Inc.
- 当前专利权人地址： US MO St. Peters
- 代理机构： Senniger Powers LLP
- 主分类号： G01B11/14
- IPC分类号： G01B11/14 ; G01B11/22
摘要：
A method of continuously measuring an elevation and shape of an unmelted polycrystalline silicon island during a silicon meltdown process. The method comprises projecting a focused bright light on the silicon island to produce a bright dot on the silicon island. The method also includes electronically determining an elevation and a shape of the silicon island by tracking the bright dot during the meltdown process.
信息查询
