发明授权
- 专利标题: Semiconductor memory device and manufacturing method thereof
- 专利标题(中): 半导体存储器件及其制造方法
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申请号: US11476145申请日: 2006-06-28
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公开(公告)号: US07576433B2公开(公告)日: 2009-08-18
- 发明人: Masakazu Ishino , Hiroaki Ikeda , Kayoko Shibata
- 申请人: Masakazu Ishino , Hiroaki Ikeda , Kayoko Shibata
- 申请人地址: JP Tokyo
- 专利权人: Elpida Memory, Inc.
- 当前专利权人: Elpida Memory, Inc.
- 当前专利权人地址: JP Tokyo
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2005-191257 20050630
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52
摘要:
A semiconductor memory device has a plurality of core chips and an interface chip, whose specification can be easily changed, while suppressing the degradation of its reliability. The device has an interposer chip. First internal electrodes connected to core chips are formed on the first surface of the interposer chip. Second internal electrodes connected to an interface chip and third internal electrodes connected to external electrodes are formed on the second surface of the interposer chip. The interface chip can be mounted on the second surface of the interposer chip whenever desired. Therefore, the memory device can have any specification desirable to a customer, only if an appropriate interface chip is mounted on the interposer chip, as is demanded by the customer. Thus, the core chips do not need to be stocked in great quantities in the form of bare chips.
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