发明授权
- 专利标题： Boost voltage generating circuit including additional pump circuit and boost voltage generating method thereof
- 专利标题（中）： 升压电压产生电路，包括附加泵电路及其升压电压产生方法
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申请号： US11360106申请日： 2006-02-22
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公开(公告)号： US07576589B2公开(公告)日： 2009-08-18
- 发明人: Ki-Chul Chun , Chang-Ho Shin
- 申请人： Ki-Chul Chun , Chang-Ho Shin
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Marger Johnson & McCollom, P.C.
- 优先权： KR10-2005-0016260 20050226
- 主分类号： G05F1/10
- IPC分类号： G05F1/10 ; G05F3/02
摘要：
A boost voltage generating circuit of a semiconductor device includes a main pump circuit having a transfer transistor, the main pump circuit to boost a voltage of a boost node and to transfer charge from the boost node to an output node through the transfer transistor in response to at least one control signal, and an additional pump circuit configured to boost a voltage of a terminal of the transfer transistor.
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