发明授权
US07577034B2 Reducing programming voltage differential nonlinearity in non-volatile storage
有权
降低非易失性存储器中的编程电压差分非线性
- 专利标题: Reducing programming voltage differential nonlinearity in non-volatile storage
- 专利标题(中): 降低非易失性存储器中的编程电压差分非线性
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申请号: US11861909申请日: 2007-09-26
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公开(公告)号: US07577034B2公开(公告)日: 2009-08-18
- 发明人: Dana Lee , Jun Wan
- 申请人: Dana Lee , Jun Wan
- 申请人地址: US CA Milpitas
- 专利权人: SanDisk Corporation
- 当前专利权人: SanDisk Corporation
- 当前专利权人地址: US CA Milpitas
- 代理机构: Vierra Magen Marcus & DeNiro LLP
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
A corrective action is taken to adjust for nonlinearities in a program voltage which is applied to a selected word line in a memory device. The nonlinearities result in a non-uniform program voltage step size which can cause over programming or slow programming. A digital to analog converter (DAC) which provides the program voltages can have a nonlinear output, such as when certain code words are input to the DAC. The memory device can be tested beforehand to determine where the nonlinearities occur, and configured to take corrective action when the corresponding code words are input. For example, the DAC may have a nonlinear output when a rollover code word is input, e.g., a when a string of least significant bits in successive code words change from 1's to 0's. The corrective action can include repeating a prior program pulse or adjusting a duration of a program pulse.
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