发明授权
US07579272B2 Methods of forming low-k dielectric layers containing carbon nanostructures
有权
形成含有碳纳米结构的低k电介质层的方法
- 专利标题: Methods of forming low-k dielectric layers containing carbon nanostructures
- 专利标题(中): 形成含有碳纳米结构的低k电介质层的方法
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申请号: US11670778申请日: 2007-02-02
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公开(公告)号: US07579272B2公开(公告)日: 2009-08-25
- 发明人: Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger, III
- 申请人: Toshiharu Furukawa , Mark Charles Hakey , Steven John Holmes , David Vaclav Horak , Charles William Koburger, III
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Wood, Herron & Evans, LLP
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
Methods of forming low-k dielectric layers for use in the manufacture of semiconductor devices and fabricating semiconductor structures using the low-k dielectric material. The low-k dielectric material comprises carbon nanostructures, like carbon nanotubes or carbon buckyballs, that are characterized by an insulating electronic state. The carbon nanostructures may be converted to the insulating electronic state either before or after a layer containing the carbon nanostructures is formed on a substrate. One approach for converting the carbon nanostructures to the insulating electronic state is fluorination.