Invention Grant
US07580295B2 Semiconductor memory device and memory system including semiconductor memory device
有权
半导体存储器件和包括半导体存储器件的存储器系统
- Patent Title: Semiconductor memory device and memory system including semiconductor memory device
- Patent Title (中): 半导体存储器件和包括半导体存储器件的存储器系统
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Application No.: US11850128Application Date: 2007-09-05
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Publication No.: US07580295B2Publication Date: 2009-08-25
- Inventor: Kwang-jin Lee , Woo-yeong Cho , Hye-jin Kim
- Applicant: Kwang-jin Lee , Woo-yeong Cho , Hye-jin Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2006-0090739 20060919
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor memory device comprises a memory cell array comprising memory cells of a first type. The memory cell array performs write and read operations in response to signals designed for the operation of a memory cell array comprising memory cells of a type other than the first type.
Public/Granted literature
- US20080068897A1 SEMICONDUCTOR MEMORY DEVICE AND MEMORY SYSTEM INCLUDING SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2008-03-20
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