发明授权
- 专利标题： Manufacturing method of electron emitting device, electron source and image display apparatus
- 专利标题（中）： 电子发射器件，电子源和图像显示装置的制造方法
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申请号： US11621658申请日： 2007-01-10
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公开(公告)号： US07582002B2公开(公告)日： 2009-09-01
- 发明人: Keisuke Yamamoto , Tamaki Kobayashi
- 申请人： Keisuke Yamamoto , Tamaki Kobayashi
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2004-127646 20040423
- 主分类号： H01J9/12
- IPC分类号： H01J9/12 ; H01J9/04
摘要：
In an electron-emitting device having a pair of electroconductors arranged on a substrate at an interval, a top of one electroconductor is higher than that of the other electroconductor and a groove extending from the interval region toward a position under a region where the one electroconductor is come into contact with the substrate is formed on the substrate. Deterioration of the electron-emitting device due to collision of charged particles is suppressed by the asymmetrical electron-emitting region, electron-emitting efficiency is improved, and a long life is realized.
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