公开(公告)号：US08177987B2

公开(公告)日：2012-05-15

申请号：US12637978

申请日：2009-12-15

申请人： Kyota Nozu ,  Kenichi Iwata ,  Tamaki Kobayashi ,  Shin Kitamura ,  Akira Shimazu

发明人： Kyota Nozu ,  Kenichi Iwata ,  Tamaki Kobayashi ,  Shin Kitamura ,  Akira Shimazu

IPC分类号： H01B13/00

CPC分类号： H01J9/025 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

摘要： A method for producing an electron-emitting device includes forming a first conductive film on a side surface of an insulation layer including the side surface and a top surface connected to the side surface; forming a second conductive film from the top surface to the side surface and on the first conductive film; and etching the second electrically conductive film.

摘要翻译： 一种电子发射器件的制造方法，包括在包括侧面的绝缘层和与侧面连接的顶面的侧面上形成第一导电膜; 从所述顶表面到所述侧表面和所述第一导电膜上形成第二导电膜; 并蚀刻第二导电膜。

公开(公告)号：US20100187096A1

公开(公告)日：2010-07-29

申请号：US12691437

申请日：2010-01-21

申请人： Naofumi Aoki ,  Tamaki Kobayashi

发明人： Naofumi Aoki ,  Tamaki Kobayashi

IPC分类号： C23C14/34

CPC分类号： C23C14/067 ,  C23C14/35 ,  C23C14/54 ,  H01J1/148 ,  H01J9/042 ,  H01J9/148

摘要： A lanthanum boride film is deposited on a substrate by means of a sputtering method while moving the substrate and a target of lanthanum boride relative to each other in a state where the substrate and the target are arranged in opposition to each other. When a mean free path of sputtering gas molecules at the time of deposition is λ (mm) and a distance between the substrate and the target is L (mm), a ratio of L/λ is set to a value equal to or larger than 20. A value which is obtained by dividing a discharge power value by an area of the target is set to be in a range of from 1 W/cm2 or more to 5 W/cm2 or less.

摘要翻译： 在基板和靶相对配置的状态下，通过溅射法在基板上沉积硼硅酸钡膜，同时相对于彼此移动基板和硼化镧靶。 当沉积时溅射气体分子的平均自由程为λ（mm），基板与目标之间的距离为L（mm）时，将L /λ的比设定为等于或大于 通过将放电功率值除以目标的面积而获得的值设定为1W / cm 2以上至5W / cm 2以下的范围。

公开(公告)号：US20100159790A1

公开(公告)日：2010-06-24

申请号：US12421758

申请日：2009-04-10

申请人： Kenichi Iwata ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Shin Kitamura

发明人： Kenichi Iwata ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Shin Kitamura

IPC分类号： H01J9/04

CPC分类号： H01J31/127 ,  H01J1/3046 ,  H01J29/04 ,  H01J2201/30423 ,  H01J2329/0423

摘要： A method of manufacturing an electron-emitting device includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film. At the first step, the conductive film is formed so that film density of a portion on the side surface of the insulating layer becomes lower than film density of a portion on the corner portion of the insulating layer.

摘要翻译： 制造电子发射器件的方法包括：第一步骤，在具有上表面和侧表面的绝缘层上形成导电膜，所述绝缘层经由拐角部分从所述侧表面延伸到所述上表面 表面并覆盖角部的至少一部分，以及蚀刻导电膜的第二步骤。 在第一步骤中，形成导电膜，使得绝缘层的侧表面上的部分的膜密度变得低于绝缘层的角部上的部分的膜密度。

公开(公告)号：US07312561B2

公开(公告)日：2007-12-25

申请号：US11106584

申请日：2005-04-15

申请人： Takuto Moriguchi ,  Toshihiko Takeda ,  Keisuke Yamamoto ,  Tamaki Kobayashi

发明人： Takuto Moriguchi ,  Toshihiko Takeda ,  Keisuke Yamamoto ,  Tamaki Kobayashi

IPC分类号： H01J9/02 ,  H01J1/00

CPC分类号： H01J1/316 ,  H01J9/027 ,  H01J31/127

摘要： An electron-emitting device is equipped with a pair of first electroconductive members arranged on a substrate with an interval between them, wherein the interval becomes narrower at an upper position distant from a surface of the substrate than at a position on the surface, and a peak of one of the pair of the first electroconductive members is higher than a peak of the other of the pair of the first electroconductive members, and further an electron scattering surface forming film including an element having an atomic number larger than those of elements constituting the first electroconductive members as a principal component is provided on a surface of the one of the first electroconductive members.

摘要翻译： 电子发射器件配备有一对第一导电构件，其布置在衬底之间，其间具有间隔，其中在距离衬底表面的上位置处的间隔比在表面上的位置处更窄，并且 一对第一导电构件中的一个的峰值高于一对第一导电构件中的另一个的峰值，并且还包括电子散射表面形成膜，其包含原子序数大于构成 第一导电构件作为主要部件设置在第一导电构件之一的表面上。

公开(公告)号：US07264530B2

公开(公告)日：2007-09-04

申请号：US11057723

申请日：2005-02-15

申请人： Tamaki Kobayashi ,  Keisuke Yamamoto

发明人： Tamaki Kobayashi ,  Keisuke Yamamoto

IPC分类号： H01J9/02 ,  H01J9/00

CPC分类号： H01J29/863 ,  G09G3/22 ,  H01J31/127 ,  H01J2329/0489 ,  H01J2329/8615

摘要： Provided is a manufacturing method capable of manufacturing an electron-emitting device in which a variation in device current at the time of manufacturing is suppressed and thus uniformity thereof is high. The electron-emitting device includes a substrate, a first conductor, and a second conductor. The substrate is composed of: a member which contains silicon oxide as a main ingredient, Na2O, and K2O and in which a molar ratio of K2O to Na2O is 0.5 to 2.0; and a film which contains silicon oxide as a main component and is stacked on the member. The first conductor and the second conductor are located on the substrate. In a forming step and/or an activation step, a quiescent period (interval) of a pulse voltage applying repeatedly applied between the first conductor and the second conductor is set equal to or longer than 10 msec.

摘要翻译： 提供了一种能够制造电子发射器件的制造方法，其中制造时的器件电流的变化被抑制并因此其均匀性高。 电子发射器件包括衬底，第一导体和第二导体。 基板由以下物质构成：以氧化硅为主要成分的成分，Na 2 O和K 2 O，其中K 2 O 2至Na 2 O为0.5至2.0; 以及含有氧化硅作为主要成分并层叠在该部件上的膜。 第一导体和第二导体位于基板上。 在形成步骤和/或激活步骤中，重复施加在第一导体和第二导体之间的脉冲电压的静止周期（间隔）被设置为等于或大于10毫秒。

公开(公告)号：US07230372B2

公开(公告)日：2007-06-12

申请号：US11106636

申请日：2005-04-15

申请人： Keisuke Yamamoto ,  Tamaki Kobayashi

发明人： Keisuke Yamamoto ,  Tamaki Kobayashi

IPC分类号： H01J19/06

CPC分类号： H01J1/316 ,  H01J9/027

摘要： In an electron-emitting device having a pair of electroconductors arranged on a substrate at an interval, a top of one electroconductor is higher than that of the other electroconductor and a groove extending from the interval region toward a position under a region where the one electroconductor is come into contact with the substrate is formed on the substrate. Deterioration of the electron-emitting device due to collision of charged particles is suppressed by the asymmetrical electron-emitting region, electron-emitting efficiency is improved, and a long life is realized.

摘要翻译： 在具有以一定间隔配置在基板上的一对电导体的电子发射器件中，一个电导体的顶部高于另一个导电体的顶部，以及从间隔区域延伸到在一个电导体 与基板接触形成在基板上。 通过不对称电子发射区域抑制由于带电粒子的碰撞引起的电子发射器件的劣化，提高了电子发射效率，并且实现了长寿命。

公开(公告)号：US06849999B1

公开(公告)日：2005-02-01

申请号：US09440535

申请日：1999-11-16

申请人： Tamaki Kobayashi ,  Masaaki Shibata

发明人： Tamaki Kobayashi ,  Masaaki Shibata

IPC分类号： C23C16/40 ,  H01J1/316 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30

CPC分类号： H01J9/027 ,  H01J1/316

摘要： A substrate for an electron source to be used for forming the electron source, the electron source and an image forming apparatus in which the substrate has been used, and manufacturing method thereof. The substrate to form the electron source in which an electron emission device is disposed includes a substrate containing Na, a first layer wish SiO2 as a main component having been formed on the substrate, and a second layer containing electron conductive oxide. The electron source includes the substrate and the electron emission device disposed on the first layer or the second layer. The image forming apparatus includes the electron source and an image forming member to form an image with irradiation of electrons emitted from the electron source. According to a manufacturing method of the substrate for forming the electron source with which the electron emission device is formed, the first layer with SiO2 as its main component, and the second layer containing electron conductive oxide are formed on a substrate containing Na. The manufacturing method of an electron source includes a step in which the first layer with SiO2 as its main component, and the second layer containing electron conductive oxide are formed on a substrate containing Na, and a step of forming an electron emission device on the first layer or on the second layer.

摘要翻译： 用于形成电子源的电子源用基板，电子源及使用了基板的图像形成装置及其制造方法。 形成电子发射器件的电子源的衬底包括含有Na的衬底，在衬底上形成有SiO 2作为主要成分的第一层，以及含有电子传导性氧化物的第二层。 电子源包括设置在第一层或第二层上的衬底和电子发射器件。 图像形成装置包括电子源和图像形成部件，以从电子源发射的电子的照射形成图像。 根据用于形成形成电子发射器件的电子源的衬底的制造方法，在含有Na的衬底上形成以SiO 2为主要成分的第一层和含有电子传导性氧化物的第二层。 电子源的制造方法包括以下步骤：以含有SiO 2为主成分的第一层和含有电子传导性氧化物的第二层形成在含有Na的基板上，在第一层上形成电子发射元件的工序 层或第二层上。

公开(公告)号：US07850502B2

公开(公告)日：2010-12-14

申请号：US12421780

申请日：2009-04-10

申请人： Yuu Nishimura ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Takahiro Sato

发明人： Yuu Nishimura ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Takuto Moriguchi ,  Eiji Takeuchi ,  Takahiro Sato

IPC分类号： H01J9/00

CPC分类号： H01J1/3046 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

摘要： An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.

摘要翻译： 一种电子发射器件制造方法包括：第一步骤，在绝缘层上形成导电膜，所述绝缘层具有通过角部连接到上表面的上表面和侧表面，以便从侧表面延伸到上表面; 覆盖角部的至少一部分，以及在膜厚度方向上蚀刻导电膜的第二工序。 在第一步骤中，形成导电膜，使绝缘层侧面上的导电膜的膜密度与绝缘膜上部的导电膜的膜密度相同或更高。

公开(公告)号：US20100159784A1

公开(公告)日：2010-06-24

申请号：US12638270

申请日：2009-12-15

申请人： Hiroshi Tomii ,  Akira Shimazu ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Shin Kitamura ,  Takahiro Sato

发明人： Hiroshi Tomii ,  Akira Shimazu ,  Tamaki Kobayashi ,  Yusuke Miyamoto ,  Shin Kitamura ,  Takahiro Sato

IPC分类号： H01J9/00 ,  H01J9/12

CPC分类号： H01J1/3046 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2329/0423

摘要： A method for producing an electron-emitting device includes forming an electrode above a top surface of an insulation layer including the top surface and a side surface connected to the top surface; forming a first conductive film on the insulation layer so as to be separated from the electrode and extend from the top surface to the side surface; forming a second conductive film on the first conductive film so as to extend from the top surface to the side surface; and etching the second conductive film.

摘要翻译： 一种电子发射器件的制造方法，包括在包括上表面的绝缘层的上表面和与顶面连接的侧面上形成电极; 在所述绝缘层上形成第一导电膜，以从所述电极分离并从所述顶表面延伸到所述侧表面; 在所述第一导电膜上形成第二导电膜，以从所述顶表面延伸到所述侧表面; 并蚀刻第二导电膜。

公开(公告)号：US20100060141A1

公开(公告)日：2010-03-11

申请号：US12553727

申请日：2009-09-03

申请人： Ouichi Kubota ,  Noritake Suzuki ,  Hideshi Kawasaki ,  Tamaki Kobayashi ,  Toshihiko Takeda

发明人： Ouichi Kubota ,  Noritake Suzuki ,  Hideshi Kawasaki ,  Tamaki Kobayashi ,  Toshihiko Takeda

IPC分类号： H01J1/62 ,  H01J1/02

CPC分类号： H01J1/316 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/3165 ,  H01J2329/0423 ,  H01J2329/0489

摘要： In an electron beam device employing an electron-emitting device in which a gate and a cathode are provided to sandwich a recess portion formed on an insulating member, electrons are scattered after the collision against the gate and then extracted, it is made possible to easily obtain stable electron emission characteristics and also to prevent the electron-emitting device from being deteriorated or being fractured due to overheating even when an excessive heat has been generated. The electron-emitting device includes the cathode having a protrusion 30 positioned astride the outer surface of the insulating member and the inner surface of the recess portion formed in the insulating member, and the gate including a layered structure of at least two electroconductive layers. A thermal expansion coefficient of the electroconductive layer which is arranged at a part facing to the protrusion is larger than that of the other electroconductive layer.

摘要翻译： 在使用电子发射器件的电子束器件中，其中设置有栅极和阴极以夹着形成在绝缘构件上的凹陷区域，电子在撞击栅极之后被散射，然后被抽出，使得可以容易地 获得稳定的电子发射特性，并且即使当产生过多的热量时也防止电子发射器件由于过热而劣化或断裂。 电子发射器件包括阴极，其具有跨过绝缘构件的外表面的突起30和形成在绝缘构件中的凹部的内表面，并且栅极包括至少两个导电层的层叠结构。 布置在面向突起的部分处的导电层的热膨胀系数大于另一导电层的热膨胀系数。